Method for manufacturing semiconductor device

• US 9,384,976 B2
• Filed: 12/22/2014
• Issued: 07/05/2016
• Est. Priority Date: 11/06/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ichijo, Mitsuhiro, Tanaka, Tetsuhiro, Yasumoto, Seiji, Mashiro, Shun, Oikawa, Yoshiaki, Okazaki, Kenichi
• Primary Examiner(s): Seven, Evren
• Application Number:
  US14/578,891
• Publication Number:
  US 20150140732A1
• Time in Patent Office: 561 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02614 Transformation of metal, e.g. oxidation, nitridation
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/44 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating film over a substrate;

forming an oxide semiconductor film on the first insulating film;

performing heat treatment on the oxide semiconductor film in an atmosphere of an inert gas; and

forming a second insulating film over the oxide semiconductor film,

wherein an oxygen concentration of the second insulating film is higher than that of the oxide semiconductor film, and

wherein the second insulating film extracts hydrogen in the oxide semiconductor film, and supplies oxygen to the oxide semiconductor film.

2. The method for manufacturing a semiconductor device according to claim 1,

wherein the step of forming the first insulating film comprises the steps of:

setting the substrate into a treatment container;

introducing a first gas in the treatment container;

generating plasma in the treatment container; and

introducing a second gas in the treatment container.

3. The method for manufacturing a semiconductor device according to claim 2, wherein the first gas comprises a rare gas.

4. The method for manufacturing a semiconductor device according to claim 2, wherein the second gas comprises dinitrogen monoxide, a rare gas, and a gas including at least one of silicon hydride and silicon halide.

5. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

forming a gate electrode over the substrate before forming the first insulating film.

6. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

forming a gate electrode over the second insulating film.

7. The method for manufacturing a semiconductor device according to claim 1, wherein a hydrogen concentration of the oxide semiconductor film is less than 5×

10¹⁹/cm³.

15. The method for manufacturing a semiconductor device according to claim 1, wherein the inert gas is one of nitrogen, helium, neon, and argon.

17. The method for manufacturing a semiconductor device according to claim 1, wherein the first insulating film is formed by plasma CVD using microwaves of 300 MHz to 300 GHz.

19. The method for manufacturing a semiconductor device according to claim 1, wherein the first insulating film is formed under conditions that a substrate temperature is 300°

C. to 350°

C., and a flow rate of dinitrogen monoxide is greater than or equal to 10 times and less than or equal to 300 times of that of silicon hydride.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating film over a substrate;

forming an oxide semiconductor film on the first insulating film;

performing heat treatment on the oxide semiconductor film in an atmosphere of an inert gas; and

forming a second insulating film over the oxide semiconductor film,

wherein an oxygen concentration of the second insulating film is higher than that of the first insulating film, and

wherein the second insulating film extracts hydrogen in the oxide semiconductor film, and supplies oxygen to the oxide semiconductor film.

9. The method for manufacturing a semiconductor device according to claim 8,

wherein the step of forming the first insulating film comprises the steps of:

setting the substrate into a treatment container;

introducing a first gas in the treatment container;

generating plasma in the treatment container; and

introducing a second gas in the treatment container.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the first gas comprises a rare gas.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the second gas comprises dinitrogen monoxide, a rare gas, and a gas including at least one of silicon hydride and silicon halide.

12. The method for manufacturing a semiconductor device according to claim 8, further comprising the step of:

forming a gate electrode over the substrate before forming the first insulating film.

13. The method for manufacturing a semiconductor device according to claim 8, further comprising the step of:

forming a gate electrode over the second insulating film.

14. The method for manufacturing a semiconductor device according to claim 8, wherein a hydrogen concentration of the oxide semiconductor film is less than 5×

10¹⁹/cm³.

16. The method for manufacturing a semiconductor device according to claim 8, wherein the inert gas is one of nitrogen, helium, neon, and argon.

18. The method for manufacturing a semiconductor device according to claim 8, wherein the first insulating film is formed by plasma CVD using microwaves of 300 MHz to 300 GHz.

20. The method for manufacturing a semiconductor device according to claim 8, wherein the first insulating film is formed under conditions that a substrate temperature is 300°

C. to 350°

C., and a flow rate of dinitrogen monoxide is greater than or equal to 10 times and less than or equal to 300 times of that of silicon hydride.