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Metal oxide protective layer for a semiconductor device

  • US 9,384,987 B2
  • Filed: 12/15/2014
  • Issued: 07/05/2016
  • Est. Priority Date: 04/04/2012
  • Status: Active Grant
First Claim
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1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:

  • providing a halogen-sensitive metal-including layer present on a substrate;

    forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; and

    forming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.

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