Metal oxide protective layer for a semiconductor device
First Claim
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
- providing a halogen-sensitive metal-including layer present on a substrate;
forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; and
forming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
1 Assignment
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Accused Products
Abstract
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
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Citations
20 Claims
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1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
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providing a halogen-sensitive metal-including layer present on a substrate; forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; and forming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a semiconductor device, the method comprising the steps of:
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forming a halogen-sensitive high-K dielectric material on a substrate; forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material; and forming a high-k dielectric metal-including film overlying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. - View Dependent Claims (13, 14, 15, 16)
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17. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
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providing a halogen-sensitive metal-including layer present on a substrate; using atomic layer deposition, forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; and forming a high-k dielectric metal-including film comprising residual halogen atoms overlying the metal oxide protective layer. - View Dependent Claims (18, 19, 20)
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Specification