Semiconductor device having a patterned gate dielectric
First Claim
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1. An insulated gate semiconductor device structure comprising:
- a region of semiconductor material having a major surface and a first conductivity type;
a first trench extending from the major surface;
a second trench extending from the major surface and spaced apart from the first trench;
a first dielectric layer formed along lower surfaces of both the first and second trenches and at least a portion of a first upper surface of both the first and second trenches;
a second dielectric layer formed along at least a portion of a second upper surface of both the first and second trenches but not along the first upper surfaces of both the first and second trenches, wherein the second dielectric layer is thinner than the first dielectric layer;
a first conductive electrode formed within the first trench along the first and second dielectric layers; and
a second conductive electrode formed within the second trench along the first and second dielectric layers, wherein the first and second conductive electrodes and the second dielectric layer are configured to control a channel region within the region of semiconductor material.
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Abstract
In one embodiment, a semiconductor device includes an isolated trench-electrode structure. The semiconductor device is formed using a modified photolithographic process to produce alternating regions of thick and thin dielectric layers that separate the trench electrode from regions of the semiconductor device. The thin dielectric layers can be configured to control the formation channel regions, and the thick dielectric layers can be configured to reduce switching losses.
38 Citations
20 Claims
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1. An insulated gate semiconductor device structure comprising:
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a region of semiconductor material having a major surface and a first conductivity type; a first trench extending from the major surface; a second trench extending from the major surface and spaced apart from the first trench; a first dielectric layer formed along lower surfaces of both the first and second trenches and at least a portion of a first upper surface of both the first and second trenches; a second dielectric layer formed along at least a portion of a second upper surface of both the first and second trenches but not along the first upper surfaces of both the first and second trenches, wherein the second dielectric layer is thinner than the first dielectric layer; a first conductive electrode formed within the first trench along the first and second dielectric layers; and a second conductive electrode formed within the second trench along the first and second dielectric layers, wherein the first and second conductive electrodes and the second dielectric layer are configured to control a channel region within the region of semiconductor material. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a region of semiconductor material having a first major surface; a first trench gate structure in the region of semiconductor material and extending from the first major surface, wherein the first trench gate structure comprises a first gate electrode having a first shape in cross-sectional view; a second trench gate structure in the region of semiconductor material and extending from the first major surface, wherein the second trench gate structure is spaced apart from the first trench gate structure, and wherein the second trench gate structure comprises a second gate electrode having a second shape in cross-sectional view; a trench electrode structure in the region of semiconductor material and extending from the first major surface, wherein the trench electrode structure is spaced apart from the first trench gate structure and the second trench gate structure, and wherein the trench electrode structure comprises an electrode having a third shape in cross-sectional view, and wherein the third shape is different than the first shape and the second shape, and wherein the trench electrode structure is disposed laterally in between the first trench gate structure and the second trench gate structure, and wherein the electrode of the trench electrode structure is electrically isolated from the region of semiconductor material, and wherein the trench electrode structure is other than a gate electrode structure; a base region of a first conductivity type adjacent at least the first trench gate structure; an emitter region of a second conductivity type opposite to the first conductivity type adjacent the first trench gate structure, but not adjacent the trench electrode structure; and a first conductive electrode electrically coupled to the emitter region. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a region of semiconductor material having a first major surface and comprising a first conductivity type; first trench gate structure in the region of semiconductor material and extending from the first major surface, wherein the first trench gate structure comprises a first gate electrode having a first shape in cross-sectional view; a second trench gate structure in the region of semiconductor material and extending from the first major surface, wherein the second trench gate structure is spaced apart from the first trench gate structure, and wherein the second trench gate structure comprises a second gate electrode having a second shape in cross-sectional view; a trench electrode structure in the region of semiconductor material and extending from the first major surface, wherein the trench electrode structure is spaced apart from the first trench gate structure and the second trench gate structure, and wherein the trench electrode structure comprises an electrode having a third shape in cross-sectional view, and wherein the third shape is different than the first shape and the second shape, and wherein the trench electrode structure is disposed laterally in between the first trench gate structure and the second trench gate structure, and wherein the electrode of the trench electrode structure is electrically isolate from the region of semiconductor material, and wherein the trench electrode structure is other than a gate electrode structure; a base region of a second conductivity type opposite to the first conductivity type adjacent at least the first trench gate structure; an emitter region of the first conductivity type adjacent the first trench gate structure but not adjacent either side of the trench electrode structure; and a first conductive electrode electrically coupled to the emitter region. - View Dependent Claims (19, 20)
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Specification