×

Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield

  • US 9,385,227 B2
  • Filed: 09/16/2013
  • Issued: 07/05/2016
  • Est. Priority Date: 01/09/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first-conductivity-type source region;

    a second-conductivity-type body region interposed between said source region and a semiconductor drift region;

    a gate electrode which is capacitively coupled to controllably invert a portion of said body region, to controllably form therein a channel which connects said source region to said drift region;

    wherein said drift region is laterally interposed between said body region and a first-conductivity-type drain region;

    permanent charge, which is embedded in at least one insulating region which adjoins said drift region, and which has a polarity which tends to deplete a layer of said drift region in proximity to said insulating region;

    a shield electrode, which is at least partly interposed between said gate electrode and said drain to reduce capacitive coupling between said gate and said drain; and

    a dielectric-filled trench within said drift region, which lies at least partly beneath said gate electrode;

    wherein said drift region is formed as a well.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×