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Semiconductor device

  • US 9,385,230 B2
  • Filed: 07/21/2015
  • Issued: 07/05/2016
  • Est. Priority Date: 03/25/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductor layer of a first conductivity type;

    a second conductor layer of the first conductivity type formed over the first conductor layer;

    a third conductor layer of a second conductivity type formed over the second conductor layer;

    a gate trench which passes through the third conductor layer and is formed in the second conductor layer;

    a first insulating film formed on an inner wall of the gate trench so as to contact the second conductor layer;

    a second insulating film formed on the inner wall of the gate trench so as to contact the third conductor layer;

    a first buried conductor layer formed in the gate trench so as to contact the first insulating film;

    a gate electrode formed in the gate trench so as to contact the second insulating film;

    a fourth conductor layer of the second conductivity type formed on a lower end of the first buried conductor layer and a lower end of the gate trench; and

    a fifth conductor layer of the first conductivity type formed over the third conductor layer,wherein the first insulating film is thicker than the second insulating film.

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