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Fin field effect transistor (FinFET) device and method for forming the same

  • US 9,385,235 B2
  • Filed: 05/30/2014
  • Issued: 07/05/2016
  • Est. Priority Date: 05/30/2014
  • Status: Active Grant
First Claim
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1. A fin field effect transistor (FinFET) device structure, comprising:

  • a substrate;

    a fin structure extending above the substrate; and

    a gate electrode formed over the fin structure, wherein the gate electrode has a plurality of first portions and a plurality of second portions, and wherein the first portions are perpendicular to the second portions.

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