Fin field effect transistor (FinFET) device and method for forming the same
First Claim
Patent Images
1. A fin field effect transistor (FinFET) device structure, comprising:
- a substrate;
a fin structure extending above the substrate; and
a gate electrode formed over the fin structure, wherein the gate electrode has a plurality of first portions and a plurality of second portions, and wherein the first portions are perpendicular to the second portions.
1 Assignment
0 Petitions
Accused Products
Abstract
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure also includes a gate electrode formed over the fin structure, and the gate electrode has a grid-like pattern when seen from a top-view.
-
Citations
19 Claims
-
1. A fin field effect transistor (FinFET) device structure, comprising:
-
a substrate; a fin structure extending above the substrate; and a gate electrode formed over the fin structure, wherein the gate electrode has a plurality of first portions and a plurality of second portions, and wherein the first portions are perpendicular to the second portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 16, 17, 18, 19)
-
-
9. A fin field effect transistor (FinFET) device structure, comprising:
-
a substrate; an isolation structure formed on the substrate; a plurality of fin structures extending above the substrate, wherein an upper portion of the fin structure protrudes from the isolation structure; a gate electrode formed over the fin structures, wherein the gate electrode has a plurality of first portions and a plurality of second portions, and the first portions are parallel to the fin structures; and an inter-layer dielectric (ILD) structure formed on the fin structures, wherein a portion of the ILD structure is directly formed on the isolation structure and between two adjacent first portions of the gate electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
Specification