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III-nitride light emitting device including porous semiconductor

  • US 9,385,265 B2
  • Filed: 04/12/2011
  • Issued: 07/05/2016
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;

    a porous III-nitride region;

    a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;

    a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and

    a plurality of openings formed in the mask layer.

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