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Semiconductor epitaxial structure and light-emitting device thereof

  • US 9,385,269 B2
  • Filed: 12/26/2012
  • Issued: 07/05/2016
  • Est. Priority Date: 11/30/2012
  • Status: Expired due to Fees
First Claim
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1. An epitaxial structure for semiconductor light-emitting device, characterized in that it comprises an electron injection region, a multi-quantum well active region and a hole injection region, as well as one or more band edge shaping layers;

  • the doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers, said doping type being non-doping, P-type doping or N-type doping;

    the band edge shaping layer trims the band edge shape of a semiconductor energy band of the epitaxial structure through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof;

    the band edge shaping layer is disposed between the electron injection region and the multi-quantum well active region to adjust the position of electron ground state level of quantum wells in the multi-quantum well active region relative to the quasi fermi level such that the carrier concentration in the quantum well layer inside the multi-quantum well active region is distributed uniformly and the overall Auger recombination is decreased;

    when the band edge shaping layer is disposed between the electron injection region and the multi quantum well active region, the band edge shaping layer makes the electron ground state level of quantum wells in the multi-quantum well active region to be decreased relative to the quasi fermi level; and

    the farther a quantum well is away from the band edge shaping layer, the less its electron ground state level is decreased relative to the quasi fermi level.

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