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Manufacturing method of semiconductor device

  • US 9,390,918 B2
  • Filed: 01/07/2015
  • Issued: 07/12/2016
  • Est. Priority Date: 04/23/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode layer over a substrate;

    forming a first insulating film comprising silicon oxide over the gate electrode layer;

    forming an oxide film comprising gallium oxide over the first insulating film;

    performing oxygen doping treatment on the oxide film comprising gallium oxide;

    forming an oxide semiconductor film over the gate electrode layer with the first insulating film and the oxide film comprising gallium oxide interposed between the oxide semiconductor film and the gate electrode layer;

    performing heat treatment on the oxide semiconductor film;

    forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and

    forming a second insulating film over the oxide semiconductor film so as to be in contact with the oxide semiconductor film.

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