Manufacturing method of semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer over a substrate;
forming a first insulating film comprising silicon oxide over the gate electrode layer;
forming an oxide film comprising gallium oxide over the first insulating film;
performing oxygen doping treatment on the oxide film comprising gallium oxide;
forming an oxide semiconductor film over the gate electrode layer with the first insulating film and the oxide film comprising gallium oxide interposed between the oxide semiconductor film and the gate electrode layer;
performing heat treatment on the oxide semiconductor film;
forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and
forming a second insulating film over the oxide semiconductor film so as to be in contact with the oxide semiconductor film.
1 Assignment
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Accused Products
Abstract
Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film subjected to the oxygen doping treatment and the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT) test can be reduced.
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Citations
25 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a first insulating film comprising silicon oxide over the gate electrode layer; forming an oxide film comprising gallium oxide over the first insulating film; performing oxygen doping treatment on the oxide film comprising gallium oxide; forming an oxide semiconductor film over the gate electrode layer with the first insulating film and the oxide film comprising gallium oxide interposed between the oxide semiconductor film and the gate electrode layer; performing heat treatment on the oxide semiconductor film; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and forming a second insulating film over the oxide semiconductor film so as to be in contact with the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 23)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a first insulating film comprising silicon oxide over the gate electrode layer, wherein the first insulating film contains an oxygen atom at a ratio greater than a stoichiometric proportion and less than four times as high as the stoichiometric proportion; forming an oxide semiconductor film over the first insulating film so as to overlap with the gate electrode layer; performing a heat treatment on the oxide semiconductor film so as to remove water or hydroxide from the oxide semiconductor film; forming a source electrode layer and a drain electrode layer over the oxide semiconductor film; and forming a second insulating film over the oxide semiconductor film so as to be in contact with the oxide semiconductor film, wherein the second insulating film contains an oxygen atom at a ratio greater than a stoichiometric proportion and less than four times as high as the stoichiometric proportion. - View Dependent Claims (9, 10, 11, 12, 13, 14, 24)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a first insulating film comprising silicon oxide over the gate electrode layer; forming a first oxide film comprising gallium oxide over the first insulating film; performing oxygen doping treatment on the first oxide film comprising gallium oxide; forming an oxide semiconductor film over the gate electrode layer with the first insulating film and the first oxide film comprising gallium oxide interposed between the oxide semiconductor film and the gate electrode layer; performing heat treatment on the oxide semiconductor film; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and forming a second oxide film comprising gallium oxide over the oxide semiconductor film so as to be in contact with the oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 25)
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Specification