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Semiconductor device and manufacturing method thereof

  • US 9,391,095 B2
  • Filed: 12/12/2013
  • Issued: 07/12/2016
  • Est. Priority Date: 12/18/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first layer comprising an oxide that comprises indium and zinc;

    a second layer over the first layer, the second layer comprising an oxide that comprises indium and zinc;

    a third layer over the second layer, the third layer comprising an oxide;

    a gate electrode, wherein the gate electrode and the first to third layers overlap with each other; and

    an interlayer insulating layer comprising hydrogen over the third layer,wherein the second layer has a crystallinity,wherein a carrier concentration of the first layer is less than 1×

    1018/cm3, andwherein a carrier concentration of the second layer is less than 1×

    1018/cm3.

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