Semiconductor device

• US 9,391,183 B2
• Filed: 03/26/2015
• Issued: 07/12/2016
• Est. Priority Date: 09/20/2013
• Status: Active Grant

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Kawashiri, Satoshi, Ogawa, Kazuko
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): DINKE, BITEW A
• Application Number:
  US14/669,189
• Publication Number:
  US 20150263151A1
• Time in Patent Office: 474 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/28 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 etching for patterning the electrodes H01L21/311, H01L21/3213; multistep manufacturing processes for data storage electrodes H01L29/4011
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/417 carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/41708 Emitter or collector electrodes for bipolar transistors
• CPC Class Codes: H01L 29/423 not carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/42304 Base electrodes for bipolar transistors
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A semiconductor device is disclosed that comprises semiconductor regions and an insulating film. A groove extends from a top surface of a semiconductor region and reaching a semiconductor region. In plan view, a body of a bottom electrode is formed in a strip form, and extends in an extending direction of the groove, and the connection portion extends in a depth direction of the groove and is connected to an end of the body in the extending direction of the body. The body of the bottom electrode is arranged in the groove, and the connection portion of the bottom electrode is arranged in the connection groove. In plan view, a length of the groove in the extending direction of the groove is larger than a width of the groove, and the width of the groove is larger than a gap between the groove and an adjacent groove.

Claims

1. A semiconductor device comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type arranged on the first semiconductor region;

a third semiconductor region of the first conductivity type arranged on the second semiconductor region;

a fourth semiconductor region of a second conductivity type arranged on the third semiconductor region;

a groove extending from a top surface of the fourth semiconductor region and reaching the second semiconductor region through the fourth semiconductor region and the third semiconductor region;

an insulation film arranged on an inner wall of the groove,

a control electrode arranged on the insulation film at a side surface of the groove, the control electrode facing the third semiconductor region;

a connection groove connected to ends of the groove, the connection groove extending from the top surface of the fourth semiconductor region and reaching the second semiconductor region through the fourth semiconductor region and the third semiconductor region;

a first main electrode electrically connected to the first semiconductor region,

a second main electrode electrically connected to the fourth semiconductor region; and

a bottom electrode arranged on the insulation film at a bottom surface of the groove and spaced from the control electrode,

wherein—

the bottom electrode comprises a body arranged at the bottom surface of the groove and a connection portion electrically connected to the main body,

in plan view, the body is formed in a strip form, and extends in an extending direction of the groove, and the connection portion extends in a depth direction of the groove and is connected to an end of the body in the extending direction of the body,

the body of the bottom electrode is arranged in the groove, and the connection portion of the bottom electrode is arranged in the connection groove, and

in plan view, a length of the groove in the extending direction of the groove is larger than a width of the groove, and the width of the groove is larger than a gap between the groove and an adjacent groove.

2. The semiconductor device according to claim 1, wherein

the groove has a width of 3 μ

m to 20 μ

m,

the groove has a depth of 2 μ

m to 10 μ

m,

the second semiconductor region has a thickness of 40 μ

m to 140 μ

m, and

the second semiconductor region has a resistivity of 10 Ω

cm to 150 Ω

cm.

3. The semiconductor device according to claim 1, wherein—

an interface between the second semiconductor region and the third semiconductor region is located between the adjacent groove, and

the interface in a region far from the groove is located closer to the first semiconductor region than the interface in regions adjoining the groove is.

4. The semiconductor device according to claim 1, wherein a length of the bottom electrode in a widthwise direction of the groove is larger than the gap between the adjacent groove.

5. The semiconductor device according to claim 1, wherein the width of the groove is larger than a depth of the groove, and the width of the groove is 3 to 20 μ

m.

6. The semiconductor device according to claim 1, wherein the bottom electrode is arranged to face 70% or more of the bottom surface of the groove.

9. The semiconductor device according to claim 1, wherein

the groove include groove arranged side by side,

the adjacent groove are connected to each other through the connection groove,

the connection groove is formed extending from the top surface of the fourth semiconductor region and reaching the second semiconductor region through the third semiconductor region, and the width of the connection groove is larger than the gap between the adjacent groove,

the bottom electrode includes the body arranged on the bottom surface of the groove, and the connection portion electrically connecting the body to the second main electrode,

in plan view, the body is formed in the strip shape and extends in the extending direction of the groove, and the connection portion extends in the depth direction of the groove,

the body is arranged inside the connection groove, and

a width of the connection portion is larger than a width of the body.

10. The semiconductor device according to claim 1, wherein the groove includes groove arranged side by side,

the adjacent groove are connected to each other through the connection groove,

the connection groove is formed extending from the top surface of the fourth semiconductor region and reaching the second semiconductor region through the third semiconductor region, and

the control electrodes are connected to each other on an inner side surface of the connection groove.

11. The semiconductor device according to claim 1, wherein

the bottom electrode includes the body arranged on the bottom surface of the groove, and the connection portion electrically connecting the body to the second main electrode,

in plan view, the body is formed in the strip shape and extends in the extending direction of the groove, and the connection portion extends in the depth direction of the groove,

the groove includes groove arranged side by side,

the adjacent groove are connected to each other through the connection groove,

the connection groove is formed extending from the top surface of the fourth semiconductor region and reaching the second semiconductor region through the third semiconductor region,

an end of the body is arranged inside the connection groove,

the control electrode is connected to a bus line through a connection portion of the control electrode,

the connection portion of the control electrode includes:

a first portion formed on an inner side surface of the connection groove,

a second portion connected to the first portion, and formed on a bottom surface of the connection groove to extend between the ends of the bodies adjacent to each other, and

a third portion connected to the second portion and formed on an outer side surface of the connection groove, and

a dimension of the second portion in the depth direction of the groove is smaller than a dimension of the control electrode in the depth direction of the groove.

7. A semiconductor device comprising:

a groove formed on a front surface of a semiconductor substrate;

a gate electrode arranged in contact with an oxide film formed on an inner surface of the groove;

a first main electrode formed on the front surface of the semiconductor substrate; and

a second main electrode formed on a back surface of the semiconductor substrate;

switching of an operating current flowing between the first main electrode and the second main electrode being controlled by a voltage applied to the gate electrode,

wherein

the gate electrode is at least partially removed from a bottom surface of the groove,

a bottom electrode separated from the gate electrode is arranged on a portion of the oxide film at the bottom surface of the groove from which the gate electrode is removed,

the bottom electrode is electrically connected to the first main electrode, and

in plan view, a body of the bottom electrode is arranged in the groove, and a connection portion of the bottom electrode is arranged in a connection groove, and each control electrode extends in the groove, in an extending direction of the groove, beyond the connection portion of the bottom electrode and is raised outside of the groove.

8. The semiconductor device according to claim 7, wherein the bottom electrode comprises a body arranged on the bottom surface of the groove, and a connection portion electrically connecting the body to the second main electrode,

wherein, in plan view, the body is formed in a strip shape and extends in the extending direction of the groove, and the connection portion extends in the depth direction of the groove, and

a dimension of the body in the depth direction of the groove is larger than a dimension of the connection portion in the depth direction of the groove.

12. A semiconductor device comprising:

a groove formed on a front surface of a semiconductor substrate;

a gate electrode arranged in contact with an oxide film formed on an inner surface of the groove;

a first main electrode formed on the front surface of the semiconductor substrate; and

a second main electrode formed on a back surface of the semiconductor substrate;

wherein

switching of an operating current flowing between the first main electrode and the second main electrode is controlled by a voltage applied to the gate electrode,

the gate electrode is at least partially removed from a bottom surface of the groove,

a bottom electrode separated from the gate electrode is arranged on a portion of the oxide film at the bottom surface of the groove from which the gate electrode is removed,

the bottom electrode is electrically connected to the first main electrode via a connection portion of the bottom electrode, and

a dimension of an extending portion of the gate electrode in the depth direction of the groove is smaller than a dimension of the gate electrode in the depth direction of the groove, the extending portion of the gate electrode facing the connection portion of the bottom electrode.

13. The semiconductor device according to claim 12, wherein

the extending portion of the gate electrode extends in the groove, in an extending direction of the groove, beyond the connection portion of the bottom electrode and is raised outside of the groove.