Please download the dossier by clicking on the dossier button x
×

Semiconductor device

  • US 9,391,209 B2
  • Filed: 09/12/2013
  • Issued: 07/12/2016
  • Est. Priority Date: 02/05/2010
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • an oxide semiconductor layer on and in direct contact with an insulating surface;

    an insulating layer over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising an opening formed from a top surface to a bottom surface of the insulating layer;

    an electrode in electrical contact with the oxide semiconductor layer in the opening;

    a gate electrode overlapping with the oxide semiconductor layer;

    a sidewall insulating layer covering a side surface of the gate electrode, the sidewall insulating layer being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and

    a gate insulating layer between the oxide semiconductor layer and the gate electrode,wherein the electrode is in direct contact with the sidewall insulating layer, andwherein the electrode is in direct contact with and covers a top region of the insulating surface.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×