Semiconductor device
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer on and in direct contact with an insulating surface;
an insulating layer over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising an opening formed from a top surface to a bottom surface of the insulating layer;
an electrode in electrical contact with the oxide semiconductor layer in the opening;
a gate electrode overlapping with the oxide semiconductor layer;
a sidewall insulating layer covering a side surface of the gate electrode, the sidewall insulating layer being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and
a gate insulating layer between the oxide semiconductor layer and the gate electrode,wherein the electrode is in direct contact with the sidewall insulating layer, andwherein the electrode is in direct contact with and covers a top region of the insulating surface.
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Abstract
An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
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Citations
29 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer on and in direct contact with an insulating surface; an insulating layer over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising an opening formed from a top surface to a bottom surface of the insulating layer; an electrode in electrical contact with the oxide semiconductor layer in the opening; a gate electrode overlapping with the oxide semiconductor layer; a sidewall insulating layer covering a side surface of the gate electrode, the sidewall insulating layer being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the electrode is in direct contact with the sidewall insulating layer, and wherein the electrode is in direct contact with and covers a top region of the insulating surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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an oxide semiconductor layer on and in direct contact with an insulating surface; an insulating layer over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising a first opening and a second opening each formed from a top surface to a bottom surface of the insulating layer; a first electrode and a second electrode each in electrical contact with the oxide semiconductor layer, and totally filling the first opening and the second opening, respectively; a gate electrode overlapping with the oxide semiconductor layer; sidewall insulating layers covering two side surfaces of the gate electrode, the sidewall insulating layers being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the first electrode and the second electrode are each in direct contact with one of the sidewall insulating layers, and wherein the first electrode and the second electrode are in direct contact with and cover a top region of the insulating surface. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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an oxide semiconductor layer on and in direct contact with an insulating surface; an insulating layer with a flat top surface over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising a first opening and a second opening each formed from the flat top surface to a bottom surface of the insulating layer; a first electrode and a second electrode each in direct contact with the oxide semiconductor layer, and totally filling the first opening and the second opening, respectively; a gate electrode overlapping with the oxide semiconductor layer; a first sidewall insulating layer and second sidewall insulating layer each covering one of two side surfaces of the gate electrode, the first and the second sidewall insulating layers being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the first electrode and the second electrode are each in direct contact with one of the sidewall insulating layers, and wherein the first electrode and the second electrode are in direct contact with and cover a top region of the insulating surface. - View Dependent Claims (19, 20)
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21. A semiconductor device comprising:
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an oxide semiconductor layer on and in direct contact with an insulating surface; an insulating layer over the oxide semiconductor layer and in direct contact with the insulating surface, the insulating layer comprising an opening formed from a top surface to a bottom surface of the insulating layer; an electrode in electrical contact with the oxide semiconductor layer in the opening; a gate electrode overlapping with the oxide semiconductor layer; a sidewall insulating layer covering a side surface of the gate electrode, the sidewall insulating layer being formed from a first layer and the insulating layer being formed from a second layer distinct from the first layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the electrode is in direct contact with the sidewall insulating layer.
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22. A semiconductor device comprising:
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an insulating surface; an oxide semiconductor layer on the insulating surface; first and second conductive layers on and in electrical contact with first and second portions of the oxide semiconductor layer, respectively; a third conductive layer overlapping a third portion of the oxide semiconductor layer, the third portion being between the first and the second portions; a first insulating layer covering a side surface of the third conductive layer and interposed between the third conductive layer and the first conductive layer; an interlayer on the insulating surface and in direct contact with side edges of the first and the second conductive layers, wherein the first insulating layer is interposed between the interlayer and the side surface of the third conductive layer, and wherein the interlayer is not interposed between a portion of the first conductive layer and a bottom portion of the third conductive layer. - View Dependent Claims (23, 24, 25)
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26. A semiconductor device comprising:
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an insulating surface; an oxide semiconductor layer on the insulating surface; first and second conductive layers on and in electrical contact with first and second portions of the oxide semiconductor layer, respectively; a third conductive layer overlapping a third portion of the oxide semiconductor layer, the third portion being between the first and the second portions; a first insulating layer covering a side surface of the third conductive layer and interposed between the third conductive layer and the first conductive layer; an interlayer on the insulating surface and in direct contact with side edges of the first and the second conductive layers, wherein the first insulating layer is interposed between the interlayer and the side surface of the third conductive layer, and wherein the first insulating layer is in direct contact with the first conductive layer. - View Dependent Claims (27, 28, 29)
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Specification