Semiconductor processing reactor and components thereof
First Claim
1. A gas delivery system for delivering at least one process gas to a reaction chamber, the gas delivery system comprising:
- a diffuser in fluid communication with said reaction chamber, said diffuser being attached directly to an upper surface of said reaction chamber, wherein a diffuser volume for distributing said at least one process gas is defined between said diffuser and said upper surface of said reaction chamber, and wherein said reaction chamber comprises opposing side edges and a centerline, wherein said diffuser comprises a plurality of distribution surfaces, a deflecting surface, a first curved side surface, a second curved side surface, and a third curved side surface, wherein the third curved side surface comprises a curve in a lateral direction, andwherein said diffuser comprises an increasing lateral width between the first curved side surface and the second curved side surface, wherein a first and a second distribution surface of the plurality of distribution surfaces are sloped downwards at different angles relative to the upper surface, wherein a third distribution surface of the plurality of distribution surfaces is sloped in a lateral direction with respect to a main flow direction along the centerline to cause the at least one process gas to become distributed laterally between the first curved side surface and the second curved side surface prior to the at least one process gas contacting the deflecting surface, andwherein said upper surface comprises a curved inlet slot substantially corresponding to said third curved side surface, wherein gas flow velocities exiting the inlet slot are higher near the opposing side edges relative to a lower gas flow velocity near the centerline.
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Accused Products
Abstract
A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
1492 Citations
15 Claims
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1. A gas delivery system for delivering at least one process gas to a reaction chamber, the gas delivery system comprising:
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a diffuser in fluid communication with said reaction chamber, said diffuser being attached directly to an upper surface of said reaction chamber, wherein a diffuser volume for distributing said at least one process gas is defined between said diffuser and said upper surface of said reaction chamber, and wherein said reaction chamber comprises opposing side edges and a centerline, wherein said diffuser comprises a plurality of distribution surfaces, a deflecting surface, a first curved side surface, a second curved side surface, and a third curved side surface, wherein the third curved side surface comprises a curve in a lateral direction, and wherein said diffuser comprises an increasing lateral width between the first curved side surface and the second curved side surface, wherein a first and a second distribution surface of the plurality of distribution surfaces are sloped downwards at different angles relative to the upper surface, wherein a third distribution surface of the plurality of distribution surfaces is sloped in a lateral direction with respect to a main flow direction along the centerline to cause the at least one process gas to become distributed laterally between the first curved side surface and the second curved side surface prior to the at least one process gas contacting the deflecting surface, and wherein said upper surface comprises a curved inlet slot substantially corresponding to said third curved side surface, wherein gas flow velocities exiting the inlet slot are higher near the opposing side edges relative to a lower gas flow velocity near the centerline. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification