Integrated circuit with sensing unit and method for using the same
First Claim
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1. A circuit comprising:
- a first conductor;
a second conductor;
a magnetic memory circuit including a magnetic storage element disposed between the said first and second conductors, wherein the magnetic storage element comprises a magnetic tunnel junction (MTJ) stack;
a sensing circuit configured to determine a change in conductivity of the magnetic storage element by monitoring a voltage drop across the magnetic storage element when a constant current is passed from the first conductor to the second conductor, thereby passing through the magnetic storage element; and
an indicator configured to indicate that the magnetic storage element is not reliable for use when the change in conductivity exceeds a pre-determined value.
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Abstract
Integrated circuit comprising a sensing unit that includes a sensing circuit, two conductors and a magnetic storage element. The sensing circuit monitors a voltage drop across the element when a current is passed between the conductors with the element in between. The voltage drop is pre-calibrated to indicate a change in conductivity in the element that is caused by an external magnetic field. Advantageously, this indication is usable particularly for assessing a possible data corruption in a magnetic memory circuit in the integrated circuit, due to stray and external magnetic fields. Methods of using the sensing unit are also proposed.
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Citations
13 Claims
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1. A circuit comprising:
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a first conductor; a second conductor; a magnetic memory circuit including a magnetic storage element disposed between the said first and second conductors, wherein the magnetic storage element comprises a magnetic tunnel junction (MTJ) stack; a sensing circuit configured to determine a change in conductivity of the magnetic storage element by monitoring a voltage drop across the magnetic storage element when a constant current is passed from the first conductor to the second conductor, thereby passing through the magnetic storage element; and an indicator configured to indicate that the magnetic storage element is not reliable for use when the change in conductivity exceeds a pre-determined value. - View Dependent Claims (2, 3)
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4. A method of using a circuit, the method comprising:
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using a sensing unit in the circuit, wherein the sensing unit comprises a magnetic memory circuit including a magnetic storage element, two conductors, and a sensing circuit, and wherein the magnetic storage element comprises a magnetic tunnel junction (MTJ) stack; determining, by the sensing circuit, a change in conductivity of the magnetic storage element by monitoring a voltage drop across the magnetic storage element when a constant current is passed from a first of the two conductors to a second of the two conductors, thereby passing through the magnetic storage element; and indicating, by an indicator, that the magnetic storage element is not reliable for use when the change in conductivity exceeds a pre-determined value. - View Dependent Claims (5, 6)
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7. A method of using a circuit, the method comprising:
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using a plurality of sensing units in the circuit, wherein each of the plurality of sensing units comprises a magnetic memory circuit including a magnetic storage element, two conductors, and a sensing circuit, and wherein the magnetic storage element comprises a magnetic tunnel junction (MTJ) stack; in each of the plurality of sensing units, determining, by the sensing circuit, a change in conductivity of the magnetic storage element by monitoring a voltage drop across the magnetic storage element by said sensing circuit when a constant current is passed from a first of the two conductors to a second of the two conductors, thereby passing through the magnetic storage element; and indicating, by an indicator, that the plurality of magnetic storage elements is not reliable for use when the change in conductivity exceeds a pre-determined value. - View Dependent Claims (8, 9, 10)
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11. A circuit comprising:
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a first conductor; a second conductor; a magnetic memory circuit including a magnetic storage element comprising a magnetic tunnel junction (MTJ) stack including; a fixed layer electrically connected to the first conductor; a tunnel oxide layer above the fixed layer; and a free layer above the tunnel oxide layer, wherein the second conductor is electrically connected to the free layer; at least one constant current source configured to drive a constant current from the first conductor to the second conductor, thereby passing through the magnetic storage element; sensing circuitry configured to measure the conductivity of the magnetic storage element while the constant current is driven from the first conductor to the second conductor; and an indicator configured to indicate that the magnetic storage element is not reliable for use when a change in conductivity exceeds a pre-determined value.
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12. A circuit comprising:
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a plurality of first conductors; a plurality of second conductors; a plurality of magnetic memory circuits including a corresponding plurality of magnetic storage elements, wherein each of the plurality of magnetic storage elements includes a fixed layer electrically connected to one of the plurality of first conductors, and wherein each of the plurality of magnetic storage elements includes a free layer electrically connected to one of the plurality of second conductors, and wherein each of the plurality of magnetic storage elements comprises a magnetic tunnel junction (MTJ) stack; a plurality of sensing circuitries corresponding to the plurality of magnetic storage elements; wherein; at least one constant current source is configured to drive constant currents from each of the first conductors to a respective one of each of the second conductors, thereby passing through a respective one of the plurality of magnetic storage elements; and the plurality of sensing circuitries is configured to measure a change in conductivity in the plurality of magnetic storage elements if the constant currents are passed through the plurality of magnetic storage elements; and an indicator configured to indicate that the plurality of magnetic storage elements is not reliable for use when the change in conductivity exceeds a pre-determined value. - View Dependent Claims (13)
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Specification