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Integrated circuit with sensing unit and method for using the same

  • US 9,395,410 B2
  • Filed: 06/06/2011
  • Issued: 07/19/2016
  • Est. Priority Date: 06/06/2011
  • Status: Active Grant
First Claim
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1. A circuit comprising:

  • a first conductor;

    a second conductor;

    a magnetic memory circuit including a magnetic storage element disposed between the said first and second conductors, wherein the magnetic storage element comprises a magnetic tunnel junction (MTJ) stack;

    a sensing circuit configured to determine a change in conductivity of the magnetic storage element by monitoring a voltage drop across the magnetic storage element when a constant current is passed from the first conductor to the second conductor, thereby passing through the magnetic storage element; and

    an indicator configured to indicate that the magnetic storage element is not reliable for use when the change in conductivity exceeds a pre-determined value.

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