Multilayered contact structure having nickel, copper, and nickel-iron layers
First Claim
1. A semiconductor device fabrication method comprising:
- forming a barrier layer upon a dielectric layer;
forming an electrically conductive plating layer upon the barrier layer, and;
forming a multilayered contact upon the plating layer by plating a first Nickel layer upon the plating layer, plating a Copper layer upon the first Nickel layer, plating a second Nickel layer upon the Copper layer, and plating a Nickel-Iron layer upon the second Nickel layer,wherein the barrier layer is a first thickness;
the plating layer is a second thickness; and
each of the first Nickel layer, the Copper layer, the second Nickel layer, and the Nickel-Iron layer is a third thickness different than the first thickness and the second thickness.
9 Assignments
0 Petitions
Accused Products
Abstract
A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.
56 Citations
15 Claims
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1. A semiconductor device fabrication method comprising:
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forming a barrier layer upon a dielectric layer; forming an electrically conductive plating layer upon the barrier layer, and; forming a multilayered contact upon the plating layer by plating a first Nickel layer upon the plating layer, plating a Copper layer upon the first Nickel layer, plating a second Nickel layer upon the Copper layer, and plating a Nickel-Iron layer upon the second Nickel layer, wherein the barrier layer is a first thickness; the plating layer is a second thickness; and each of the first Nickel layer, the Copper layer, the second Nickel layer, and the Nickel-Iron layer is a third thickness different than the first thickness and the second thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device fabrication method comprising:
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forming a barrier layer upon a dielectric layer; forming an electrically conductive plating layer upon the barrier layer, and; forming a multilayered contact upon the plating layer, the multilayered contact comprising;
a first Nickel layer upon the plating layer, a Copper layer upon the first Nickel layer, a second Nickel layer upon the Copper layer, and a Nickel-Iron layer upon the second Nickel layer,wherein the barrier layer is a first thickness; the plating layer is a second thickness; and each of the first Nickel layer, the Copper layer, the second Nickel layer, and the Nickel-Iron layer is a third thickness different than the first thickness and the second thickness. - View Dependent Claims (12, 13, 14, 15)
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Specification