Semiconductor devices and methods of making the same
First Claim
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1. A semiconductor device comprising:
- a conductive substrate electrically coupled to a first lead, wherein the conductive substrate comprises a first elevated region on a first side of the conductive substrate and second elevated region on the first side of the conductive substrate, wherein the first elevated region comprises a first planar surface on the first side of the conductive substrate, and wherein the second elevated region comprises a second planar surface on the first side of the conductive substrate; and
a semiconductor die comprising a first contact pad electrically coupled to the conductive substrate, wherein the first contact pad is soldered to both the first planar surface of the first elevated region and the second planar surface of the second elevated region, and wherein the first planar surface of the first elevated region has different dimensions than the second planar surface of the second elevated region, and wherein the first planar surface of the first elevated region has a first corner that is laterally aligned with a first corner of the first contact pad.
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Abstract
In one embodiment, methods for making semiconductor devices are disclosed.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a conductive substrate electrically coupled to a first lead, wherein the conductive substrate comprises a first elevated region on a first side of the conductive substrate and second elevated region on the first side of the conductive substrate, wherein the first elevated region comprises a first planar surface on the first side of the conductive substrate, and wherein the second elevated region comprises a second planar surface on the first side of the conductive substrate; and a semiconductor die comprising a first contact pad electrically coupled to the conductive substrate, wherein the first contact pad is soldered to both the first planar surface of the first elevated region and the second planar surface of the second elevated region, and wherein the first planar surface of the first elevated region has different dimensions than the second planar surface of the second elevated region, and wherein the first planar surface of the first elevated region has a first corner that is laterally aligned with a first corner of the first contact pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a conductive substrate electrically coupled to a first lead, wherein the conductive substrate comprises a first elevated region on a first side of the conductive substrate, a second elevated region on the first side of the conductive substrate, and a third elevated region on the first side of the conductive substrate, wherein the first elevated region comprises a first planar surface on the first side of the conductive substrate, wherein the second elevated region comprises a second planar surface on the first side of the conductive substrate, and wherein the third elevated region comprises a third planar surface on the first side of the conductive substrate; and a semiconductor die comprising a first contact pad and a second contact pad electrically coupled to the conductive substrate, wherein the first contact pad is soldered to the first planar surface of the first elevated region and the second contact pad is soldered to the second planar surface of the second elevated region, and wherein the third planar surface of the third elevated region is not soldered to the semiconductor die, and wherein the third planar surface of the third elevated region is laterally positioned away from a footprint of the semiconductor die. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a conductive substrate electrically coupled to a first lead, wherein the conductive substrate comprises a first elevated region on a first side of the conductive substrate, a second elevated region on the first side of the conductive substrate, and a third elevated region on the first side of the conductive substrate, wherein the first elevated region comprises a first planar surface on the first side of the conductive substrate, wherein the second elevated region comprises a second planar surface on the first side of the conductive substrate, and wherein the third elevated region comprises a third planar surface on the first side of the conductive substrate; and a semiconductor die comprising a first contact pad and a second contact pad electrically coupled to the conductive substrate, wherein the first contact pad is soldered to the first planar surface of the first elevated region and the second contact pad is soldered to the second planar surface of the second elevated region, and wherein the third planar surface of the third elevated region is not soldered to the semiconductor die, and wherein a portion of the third planar surface of the third elevated region is laterally positioned away from a footprint of the semiconductor die. - View Dependent Claims (20)
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Specification