Semiconductor component arrangement comprising a trench transistor

• US 9,397,091 B2
• Filed: 07/14/2014
• Issued: 07/19/2016
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus, Hirler, Franz, Krischke, Norbert
• Primary Examiner(s): Nguyen, Thanh T
• Application Number:
  US14/330,847
• Publication Number:
  US 20150008498A1
• Time in Patent Office: 736 Days
• Field of Search: 257/302, 257/228, 257327-330, 257/432
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02233 of the semiconductor substrate or a semiconductor layer
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66704 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 : the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 : having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7811 : with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 : with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 : Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7823 : with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7825 : with trench gate electrode trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/945 : Trench capacitors

Abstract

A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench. The method also includes producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. The gate electrode and the at least one electrode of the electrode structure are produced by common process steps.

Claims

1. A semiconductor component arrangement, comprising:

a semiconductor body comprising a semiconductor material extending from a first side to a second side spaced apart from the first side in a vertical direction of the semiconductor body, a transistor section, and a capacitor section spaced apart from the transistor section in a lateral direction of the semiconductor body;

in the transistor section, a vertical trench transistor comprising at least one trench extending into the semiconductor body from the first surface, at least one gate electrode disposed in the at least one trench, a source region, and a drain region spaced apart from the source region in the vertical direction of the semiconductor body; and

in the capacitor section, a capacitor structure comprising at least one further trench extending into the semiconductor body from the first surface, and a capacitor electrode in the at least one further trench, wherein the capacitor electrode is dielectrically insulated from the semiconductor body by a dielectric layer.

2. The semiconductor component arrangement of claim 1, wherein the transistor structure further comprises a gate dielectric on surfaces of the at least one trench.

3. The semiconductor component arrangement of claim 1, wherein the transistor structure further comprises a field electrode arranged in the at least one trench and dielectrically insulated from the gate electrode and the semiconductor body.

4. The semiconductor component arrangement of claim 1, wherein the capacitor structure further comprises at least one further electrode formed by a region of the semiconductor body which adjoins the at least one further trench.

5. The semiconductor component arrangement of claim 1, wherein the capacitor structure further comprises at least one further electrode formed in the at least one further trench and dielectrically insulated from the at least one electrode.

6. The semiconductor component arrangement of claim 1, wherein the at least one further trench in the capacitor section is wider in a lateral direction of the semiconductor body than the at least one trench in the transistor section.

7. The semiconductor component arrangement of claim 1, wherein the at least one further trench in the capacitor section is deeper in a vertical direction of the semiconductor body than the at least one trench in the transistor section.

8. The semiconductor component arrangement of claim 1, wherein the at least one trench in the transistor section is an elongated trench.

9. The semiconductor component arrangement of claim 8,

wherein the at least one trench in the transistor section has a width in a first lateral direction and a length in a second lateral direction,

wherein the length is at least 10 times the width.

10. The semiconductor component arrangement of claim 1, wherein the at least one further trench in the capacitor section is an elongated trench.

11. The semiconductor component arrangement of claim 10,

wherein the at least one further trench in the capacitor section has a width in a first lateral direction and a length in a second lateral direction,

wherein the length is at least 10 times the width.

12. The semiconductor component arrangement of claim 1,

wherein the vertical trench transistor further comprises a body region and a gate dielectric,

wherein the gate dielectric dielectrically insulates the gate electrode from the body region.

13. A semiconductor component arrangement, comprising:

a trench transistor structure including at least one trench disposed in a semiconductor body and at least one gate electrode disposed in the at least one trench, wherein the semiconductor body comprises a semiconductor material extending from a first side to a second side spaced apart from the first side in a vertical direction of the semiconductor body;

a capacitor structure comprising an electrode structure disposed in at least one further trench spaced apart from the at least one trench in a lateral direction of the semiconductor body, the electrode structure comprising at least one electrode; and

wherein the gate electrode and the at least one electrode of the electrode structure were produced by common process steps.

14. The semiconductor component arrangement of claim 13, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode.

15. The semiconductor component arrangement of claim 13,

wherein the at least one trench of the transistor structure extends in a vertical direction of the semiconductor body, and

wherein the at least one further trench of the capacitor structure extends in the vertical direction of the semiconductor body.

16. The semiconductor component arrangement of claim 13, wherein the transistor structure further comprises:

a source region and a drain region spaced apart from the source region in the vertical direction of the semiconductor body.