Semiconductor device and method for producing semiconductor device

• US 9,397,142 B2
• Filed: 12/07/2015
• Issued: 07/19/2016
• Est. Priority Date: 11/13/2013
• Status: Active Grant

• Current Assignee: Unisantis Electronics Singapore Pte. Ltd. (NewScope Group Holdings AG)
• Original Assignee: Unisantis Electronics Singapore Pte. Ltd. (NewScope Group Holdings AG)
• Inventors: Masuoka, Fujio, Nakamura, Hiroki
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US14/960,706
• Publication Number:
  US 20160093673A1
• Time in Patent Office: 225 Days
• Field of Search: 257/288, 257/350, 257/401, 257/618, 438/149, 438/156, 438/197, 438/279, 438/286
• US Class Current: 1/1
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H10B 63/34 of the vertical channel field-effect transistor type
• CPC Class Codes: H10B 63/80 Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• CPC Class Codes: H10N 70/011 Manufacture or treatment of multistable switching devices
• CPC Class Codes: H10N 70/021 Formation of the switching material, e.g. layer deposition
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/235 between different crystalline phases, e.g. cubic and hexagonal
• CPC Class Codes: H10N 70/253 having three or more terminals, e.g. transistor-like devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

A semiconductor device includes a pillar-shaped resistance-changing layer on a contact and a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer. A reset gate surrounds the reset gate insulating film, and the reset gate is electrically insulated from the pillar-shaped resistance-changing layer.

Claims

1. A semiconductor device comprising:

a pillar-shaped resistance-changing layer on a contact;

a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and

a reset gate that surrounds the reset gate insulating film,

wherein the reset gate is electrically insulated from the pillar-shaped resistance-changing layer.