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Semiconductor device

  • US 9,397,149 B2
  • Filed: 12/23/2014
  • Issued: 07/19/2016
  • Est. Priority Date: 12/27/2013
  • Status: Active Grant
First Claim
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1. A display device comprising:

  • a first flexible substrate;

    a first bonding layer over the first flexible substrate;

    a first insulating film over the first bonding layer;

    a first element layer over the first insulating film;

    a second element layer over the first element layer;

    a second insulating film over the second element layer;

    a second bonding layer over the second insulating film; and

    a second flexible substrate over the second bonding layer,wherein the first element layer includes a pixel portion and a circuit portion, wherein the pixel portion includes a display element and a first transistor and the circuit portion includes a second transistor,wherein the second element layer includes a coloring layer and a light-blocking layer,wherein the first transistor includes;

    a first oxide semiconductor layer including a channel formation region; and

    a first gate electrode over the first oxide semiconductor layer,wherein the second transistor includes;

    a conductive layer;

    a second oxide semiconductor layer over the conductive layer;

    a third oxide semiconductor layer over the second oxide semiconductor layer, the third oxide semiconductor layer including a channel formation region;

    a fourth oxide semiconductor layer over the third oxide semiconductor layer; and

    a second gate electrode over the fourth oxide semiconductor layer, the second gate electrode facing a side surface of the third oxide semiconductor layer, andwherein the first transistor is a transistor having a single-gate structure.

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