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Semiconductor structure having a metal gate with side wall spacers

  • US 9,397,189 B2
  • Filed: 04/28/2015
  • Issued: 07/19/2016
  • Est. Priority Date: 12/02/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure having a metal gate, the method comprising the following steps:

  • providing a semiconductor substrate;

    forming at least a gate structure on the semiconductor substrate, the gate structure comprising a gate dielectric layer and a gate sacrificial layer;

    forming a spacer structure on a peripheral side wall of the gate structure;

    forming an interlayer dielectric layer covering the gate structure and the spacer structure;

    planarizing the interlayer dielectric layer to expose the gate sacrificial layer;

    removing a portion of the gate sacrificial layer to an initial etching depth to form an opening and expose a portion of the spacer structure, wherein the initial etching depth is at least larger than half of a height of the gate sacrificial layer in the step of removing the portion of the sacrificial layer to the initial etching step;

    after removing the portion of the gate sacrificial layer, removing a portion of the spacer structure exposed to the opening to broaden the opening;

    removing the gate sacrificial layer completely; and

    forming a gate conductive layer to fill the opening.

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