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Method for manufacturing semiconductor device with oxide semiconductor ohmic conatct layers

  • US 9,397,194 B2
  • Filed: 07/02/2015
  • Issued: 07/19/2016
  • Est. Priority Date: 09/01/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising steps of:

  • forming a gate electrode over an insulating surface;

    forming a gate insulating layer over the gate electrode by sputtering;

    forming a first semiconductor layer over the gate insulating layer by sputtering without exposure to air after forming the gate insulating layer;

    forming a second semiconductor layer over the first semiconductor layer by sputtering; and

    patterning the second semiconductor layer to form a source region and a drain region over the first semiconductor layer,wherein the first semiconductor layer is an oxide semiconductor layer, andwherein the source region and the drain region are oxide semiconductor layers containing indium, gallium, and zinc, and have a lower oxygen concentration than the first semiconductor layer, andwherein the source region and the drain region include a crystal grain with a size of 1 nm to 10 nm.

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