Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode over a substrate;
forming a gate insulating film so as to cover the gate electrode;
forming an oxide semiconductor film over the gate insulating film;
forming a pair of electrodes over the oxide semiconductor film, the pair of electrodes being in contact with at least part of the oxide semiconductor film;
forming a protective film over the oxide semiconductor film and the pair of electrodes; and
performing heat treatment so as to release hydrogen from the oxide semiconductor film,wherein the protective film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order.
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Accused Products
Abstract
In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.
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Citations
24 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film so as to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a pair of electrodes over the oxide semiconductor film, the pair of electrodes being in contact with at least part of the oxide semiconductor film; forming a protective film over the oxide semiconductor film and the pair of electrodes; and performing heat treatment so as to release hydrogen from the oxide semiconductor film, wherein the protective film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a base film; an oxide semiconductor film over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween; and a pair of electrodes in contact with at least part of the oxide semiconductor film, wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device comprising:
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a gate electrode; a gate insulating film covering the gate electrode; an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween; a pair of electrodes in contact with at least part of the oxide semiconductor film; and a protective film over the oxide semiconductor film, wherein the protective film comprises a hydrogen permeable film and a hydrogen capture film which are stacked in this order. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device comprising:
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a first insulating film; an oxide semiconductor film over the first insulating layer; a pair of electrodes over and in contact with at least part of the oxide semiconductor film; and a second insulating film over the oxide semiconductor film and the pair of electrodes, wherein one of the first insulating film and the second insulating film comprises a third insulating film and a fourth insulating film which are stacked, the third insulating film being adjacent to the oxide semiconductor film, wherein the third insulating film and the fourth insulating film are configured to transfer hydrogen from the oxide semiconductor film to the fourth insulating film through the third insulating film by a heat treatment, wherein the hydrogen is captured by the fourth insulating film. - View Dependent Claims (21, 22, 23, 24)
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Specification