Semiconductor device and manufacturing method of the same

• US 9,397,255 B2
• Filed: 12/29/2014
• Issued: 07/19/2016
• Est. Priority Date: 05/16/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Woldegeorgis, Ermias
• Application Number:
  US14/584,013
• Publication Number:
  US 20150115261A1
• Time in Patent Office: 568 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

Claims

1. A semiconductor device comprising

a first conductive film;

a second conductive film;

a third conductive film over and in contact with the first conductive film;

a fourth conductive film over and in contact with the second conductive film;

a first insulating film over the first conductive film, the third conductive film and the fourth conductive film;

a pixel electrode over the third conductive film with the first insulating film therebetween; and

a transistor comprising a semiconductor film, a gate electrode, a source electrode, a drain electrode and a gate dielectric,

wherein the first conductive film and the second conductive film are transparent, and the third conductive film and the fourth conductive film are not transparent,

wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,

wherein the semiconductor film is an oxide comprising indium (In), gallium (Ga) and zinc (Zn),

wherein a first portion of the second conductive film works as the gate electrode,

wherein a first portion of the pixel electrode works as an upper electrode of a storage capacitor,

wherein a first portion of the first conductive film works as a lower electrode of the storage capacitor,

wherein a first portion of the first insulating film works as a dielectric of the storage capacitor,

wherein the storage capacitor is transparent such that a light passes through the storage capacitor, and

wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive film.

2. The semiconductor device according to claim 1,

wherein a second portion of the third conductive film is included in a capacitor line, and

wherein a second portion of the fourth conductive film is included in a gate line.

3. The semiconductor device according to claim 2, wherein the semiconductor film does not overlap with the fourth conductive film.

4. The semiconductor device according to claim 1, wherein a second portion of the first insulating film is the gate dielectric of the transistor.

5. The semiconductor device according to claim 1, further comprising a second insulating film between the first insulating film and the pixel electrode.

6. The semiconductor device according to claim 1, wherein the semiconductor film is provided over the first insulating film.

7. The semiconductor device according to claim 1, further comprising:

a fifth conductive film over the semiconductor film; and

a sixth conductive film over the fifth conductive film,

wherein the fifth conductive film is transparent and the sixth conductive film is not transparent,

wherein the transistor uses a first portion of the fifth conductive film as one of the source electrode and the drain electrode,

wherein the fifth conductive film is included in a source line, and

wherein an entirety of the sixth conductive film overlaps with the fifth conductive film while the first portion of the fifth conductive film do not overlap with the sixth conductive film.

8. The semiconductor device according to claim 1, wherein the first conductive film and the second conductive film are formed by etching a seventh conductive film.

9. The semiconductor device according to claim 1, wherein the transistor is transparent such that a light passes through the transistor.

10. A semiconductor device comprising:

a first conductive film;

a third conductive film over and in contact with the first conductive film;

a first insulating film over the first conductive film and the third conductive film;

a pixel electrode over the third conductive film with the first insulating film therebetween; and

a transistor comprising a semiconductor film, a gate electrode, a source electrode, a drain electrode and a gate dielectric,

wherein the first conductive film is transparent, and the third conductive film is not transparent,

wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,

wherein the semiconductor film is an oxide comprising indium (In), gallium (Ga) and zinc (Zn),

wherein a first portion of the pixel electrode works as an upper electrode of a storage capacitor,

wherein a first portion of the first conductive film works as a lower electrode of the storage capacitor,

wherein a first portion of the first insulating film works as a dielectric of the storage capacitor,

wherein the storage capacitor is transparent such that a light passes through the storage capacitor, and

wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive film.

11. The semiconductor device according to claim 10,

wherein a second portion of the third conductive film is included in a capacitor line.

12. The semiconductor device according to claim 10, wherein a second portion of the first insulating film is the gate dielectric of the transistor.

13. The semiconductor device according to claim 10, further comprising a second insulating film provided between the first insulating film and the pixel electrode.

14. The semiconductor device according to claim 10, wherein the semiconductor film is provided over the first insulating film.

15. The semiconductor device according to claim 10, further comprising:

a fifth conductive film over the semiconductor film; and

a sixth conductive film over the fifth conductive film,

wherein the fifth conductive film is transparent and the sixth conductive film is not transparent,

wherein the transistor uses a first portion of the fifth conductive film as one of the source electrode and the drain electrode,

wherein the fifth conductive film is included in a source line,

wherein an entirety of the sixth conductive film overlaps with the fifth conductive film while the first portion of the fifth conductive film do not overlap with the sixth conductive film.

16. The semiconductor device according to claim 10, wherein the first conductive film and the gate electrode are formed by etching a seventh conductive film.

17. The semiconductor device according to claim 10, wherein the transistor is transparent such that a light passes through the transistor.

18. A semiconductor device comprising:

a first conductive film;

a third conductive film over and in contact with the first conductive film;

a first insulating film over the first conductive film and the third conductive film;

a pixel electrode over the third conductive film with the first insulating film therebetween; and

a transistor comprising a semiconductor film, a gate electrode, a source electrode and a drain electrode,

wherein the first conductive film is transparent, and the third conductive film is not transparent,

wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,

wherein a first portion of the pixel electrode works as an upper electrode of a capacitor,

wherein a first portion of the first conductive film works as a lower electrode of the capacitor,

wherein a first portion of the first insulating film works as a dielectric of the capacitor,

wherein the capacitor is transparent such that a light passes through the capacitor, and

wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive film.

19. The semiconductor device according to claim 18,

wherein a second portion of the third conductive film is included in a capacitor line.

20. The semiconductor device according to claim 18, wherein a second portion of the first insulating film is the gate dielectric of the transistor.

21. The semiconductor device according to claim 18, further comprising a second insulating film between the first insulating film and the pixel electrode.

22. The semiconductor device according to claim 18, wherein the semiconductor film is over the first insulating film.

23. The semiconductor device according to claim 18, wherein the transistor is transparent such that a light passes through the transistor.