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Lateral semiconductor light emitting diodes having large area contacts

  • US 9,397,266 B2
  • Filed: 01/20/2014
  • Issued: 07/19/2016
  • Est. Priority Date: 11/14/2007
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED) comprising:

  • a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;

    at least one dielectric layer on said first face;

    a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer;

    a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer, wherein said LED emits light from a side of said LED adjacent to said second face;

    a filling layer between said first metal layer and said second metal layer; and

    a transparent contact between said first metal layer and said diode region, wherein said transparent contact comprises indium tin oxide (ITO).

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