Lateral semiconductor light emitting diodes having large area contacts
First Claim
Patent Images
1. A light emitting diode (LED) comprising:
- a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;
at least one dielectric layer on said first face;
a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer;
a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer, wherein said LED emits light from a side of said LED adjacent to said second face;
a filling layer between said first metal layer and said second metal layer; and
a transparent contact between said first metal layer and said diode region, wherein said transparent contact comprises indium tin oxide (ITO).
3 Assignments
0 Petitions
Accused Products
Abstract
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
-
Citations
38 Claims
-
1. A light emitting diode (LED) comprising:
-
a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; at least one dielectric layer on said first face; a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer; a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer, wherein said LED emits light from a side of said LED adjacent to said second face; a filling layer between said first metal layer and said second metal layer; and a transparent contact between said first metal layer and said diode region, wherein said transparent contact comprises indium tin oxide (ITO). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
-
-
24. A light emitting diode (LED) comprising:
-
a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; an anode pad that electrically contacts said p-type layer and extends on the first face; a cathode pad that electrically contacts the n-type layer and also extends on the first face, such that a gap is defined that extends along the first face between the anode and cathode pads, wherein the anode and cathode pads are adjacent to each other and extend to said gap therebetween; and a filling layer in the gap. - View Dependent Claims (25, 26, 27)
-
-
28. A light emitting diode (LED) comprising:
-
an n-type semiconductor layer; a p-type semiconductor layer; an anode contact electrically contacting said p-type layer; a cathode contact electrically contacting said n-type layer and electrically isolated from said anode; wherein said cathode contact overlaps said anode contact and contacts said n-type layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
-
Specification