Silicon DBR structure-integrated light element, and preparation method

• US 9,397,479 B2
• Filed: 11/30/2012
• Issued: 07/19/2016
• Est. Priority Date: 02/03/2012
• Status: Active Grant

• Current Assignee: Gwangju Institute of Science and Technology
• Original Assignee: Gwangju Institute of Science and Technology
• Inventors: Lee, Yong-Tak, Jang, Sung Joon, Song, Young Min
• Primary Examiner(s): King, Joshua
• Application Number:
  US14/376,452
• Publication Number:
  US 20150131691A1
• Time in Patent Office: 1,327 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/187 using Bragg reflection

Abstract

The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

Claims

1. A silicon distributed Bragg reflector (DBR) structure-integrated light device, comprising:

a bottom reflector layer formed by alternately stacking two semiconductor material layers having different indices of refraction;

an n-type ohmic contact layer formed on an upper surface of the bottom reflector layer;

an active layer formed on an upper surface of the n-type ohmic contact layer, and configured to generate light through recombination of electrons and holes injected through at least one oxidizable layer having a current injection hole formed at a center thereof,

wherein the at least one oxidizable layer is encompassed by the active layer;

a p-type ohmic contact layer formed on an upper surface of the active layer;

a top reflector layer formed on an upper surface of the p-type ohmic contact layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; and

n-type and p-type electrodes formed on the upper surfaces of the n-type and p-type ohmic contact layers, respectively,

wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the p-type ohmic contact layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the p-type ohmic contact layer, and

wherein the active layer directly contacts with each of the p-type ohmic contact layer and the n-type ohmic contact layer.

2. The silicon DBR structure-integrated light device according to claim 1, wherein the index of refraction of each of the first and second silicon layers is determined in the range of 1 to 5.

3. The silicon DBR structure-integrated light device according to claim 1, wherein the first and second silicon layers are formed of a single material selected from the group consisting of crystalline silicon, amorphous silicon, and intermediate phase silicon.

4. The silicon DBR structure-integrated light device according to claim 1, wherein the first silicon layer has a porous structure.

5. The silicon DBR structure-integrated light device according to claim 1, wherein the inclination is in the range of 1°

to 90°

.

6. The silicon DBR structure-integrated light device according to claim 1, wherein the first and second silicon layers have a thickness of 0.001 μ

m to 100 μ

m.

7. The silicon DBR structure-integrated light device according to claim 1, wherein each of the first and second silicon layers has an alternating structure of low-index and high-index layer, which is repeated between two to five times.