Charge pump with wide operating range

• US 9,397,557 B2
• Filed: 05/15/2014
• Issued: 07/19/2016
• Est. Priority Date: 05/15/2014
• Status: Active Grant

• Current Assignee: MediaTek, Inc.
• Original Assignee: MediaTek, Inc.
• Inventors: Chiu, Wei-Hao, Lin, Ang-Sheng
• Primary Examiner(s): TRA, ANH QUAN
• Application Number:
  US14/278,207
• Publication Number:
  US 20150333623A1
• Time in Patent Office: 796 Days
• Field of Search: 327/156, 327/157, 327/148, 327/536
• US Class Current: 1/1
• CPC Class Codes: H02M 1/0025 Arrangements for modifying reference values, feedback values or error values in the control loop of a converter
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps
• CPC Class Codes: H03L 7/0895 Details of the current generators H03L7/0893 takes precedence
• CPC Class Codes: H03L 7/0896 the current generators being controlled by differential up-down pulses

Abstract

A charge pump at least includes a current source, a first switch, a second switch, a level-shift circuit, and a capacitor. The first switch is coupled between the current source and an internal node. The capacitor is coupled between the internal node and the level-shift circuit. The second switch is coupled between the internal node and an output node. The first switch performs a closing-and-opening operation and the level-shift circuit performs a level-shift operation while the second switch is kept open and the internal node is isolated from the output node. The operating range of the charge pump is effectively widened by using the proposed design.

Claims

1. A charge pump, comprising:

a first current source;

a first switch, coupled between the first current source and a first node;

a first level-shift circuit;

a first capacitor, coupled between the first node and the first level-shift circuit; and

a second switch, coupled between the first node and an output node, wherein the first switch performs a closing-and-opening operation and the first level-shift circuit performs a level-shift operation while the second switch is kept open;

a second current source;

a third switch, coupled between the second current source and a second node;

a second level-shift circuit;

a second capacitor, coupled between the second node and the second level-shift circuit; and

a fourth switch, coupled between the second node and the output node;

wherein the third switch performs a closing-and-opening operation and the second level-shift circuit performs a level-shift operation while the fourth switch is kept open,

wherein the first current source supplies a current to the first node, and the second current source draws a current from the second node.

2. The charge pump as claimed in claim 1, wherein the first level-shift circuit generates a level-shift signal which switches between a high logic level and a low logic level so as to change a first voltage at the first node.

3. The charge pump as claimed in claim 1, wherein the first current source supplies a current to the first node.

4. The charge pump as claimed in claim 1, wherein the first switch is implemented with an MOS transistor (Metal Oxide Semiconductor Field Effect Transistor) which has a control terminal for receiving a first control signal, a first terminal coupled to the first current source, and a second terminal coupled to the first node.

5. The charge pump as claimed in claim 4, wherein the first level-shift circuit comprises a first inverter which has an input terminal for receiving a second control signal, and output terminal coupled to the first capacitor.

6. The charge pump as claimed in claim 5, wherein the second control signal is substantially complementary to the first control signal.

7. The charge pump as claimed in claim 4, wherein the second switch is implemented with a transmission gate which is closed or opened according to a third control signal.

8. The charge pump as claimed in claim 7, wherein during each operation of the charge pump, the third control signal switches logic level before the first control signal switches logic level, and then the third control signal switches back after the first control signal switches back.

9. The charge pump as claimed in claim 1, wherein the second level-shift circuit generates a level-shift signal which switches between a high logic level and a low logic level so as to change a second voltage at the second node.

10. The charge pump as claimed in claim 1, wherein the third switch is implemented with an MOS transistor (Metal Oxide Semiconductor Field Effect terminal coupled to the second current source, and a second terminal coupled to the second node.

11. The charge pump as claimed in claim 10, wherein the second level-shift circuit comprises a second inverter which has an input terminal for receiving a fifth control signal, and output terminal coupled to the second capacitor.

12. The charge pump as claimed in claim 11, wherein the fifth control signal is substantially complementary to the fourth control signal.

13. The charge pump as claimed in claim 12, wherein the fourth switch is implemented with a transmission gate which is closed or opened according to a sixth control signal.

14. The charge pump as claimed in claim 13, wherein during each operation of the charge pump, the sixth control signal switches logic level before the fourth control signal switches logic level, and then the sixth control signal switches back after the fourth control signal switches back.

15. A method for operation of a charge pump, comprising the steps of:

providing the charge pump which comprises a first current source, a first level-shift circuit, a first switch, a second switch, a first capacitor coupled to a first node, a second current source, a second level-shift circuit, a third switch, a fourth switch, and a second capacitor coupled to a second node;

supplying a current to the first node by the first current source;

changing a logic level of the first capacitor by the first level-shift circuit;

coupling the first current source to the first node by the first switch;

isolating the first current source from the first node by the first switch;

recovering the logic level of the first capacitor by the first level-shift circuit;

coupling the first node to an output node of the charge pump by the second switch;

isolating the first node from the output node of the charge pump by the second switch;

drawing a current from the second node by the second current source;

changing a logic level of the second capacitor by the second level-shift circuit;

coupling the second current source to the second node by the third switch;

isolating the second current source from the second node by the third switch;

recovering the logic level of the second capacitor by the second level-shift circuit;

coupling the second node to the output node of the charge pump by the fourth switch; and

isolating the second node from the output node of the charge pump by the fourth switch.

16. The method as claimed in claim 15, wherein the steps of changing the logic level of the first capacitor, coupling the first current source to the first node, isolating the first current source from the first node, and recovering the logic level of the first capacitor are performed while the first node is kept isolated from the output node of the charge pump.

17. The method as claimed in claim 15, wherein the steps of changing the logic level of the second capacitor, coupling the second current source to the second node, isolating the second current source from the second node, and recovering the logic level of the second capacitor are performed while the second node is kept isolated from the output node of the charge pump.