×

Semiconductor device and display device

  • US 9,397,649 B2
  • Filed: 09/09/2013
  • Issued: 07/19/2016
  • Est. Priority Date: 09/11/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a substrate;

    an oxide semiconductor thin film transistor formed on said substrate and having a gate electrode, an oxide semiconductor layer facing said gate electrode with a first insulating layer therebetween, and a source electrode and a drain electrode connected to said oxide semiconductor layer;

    a calibration electrode facing said oxide semiconductor layer with a second insulating layer therebetween and overlapping, when viewed from a direction normal to the substrate, at least part of said gate electrode, said oxide semiconductor layer being interposed between said gate electrode and said calibration electrode; and

    a calibration voltage setting circuit that determines a voltage to be applied to said calibration electrode;

    wherein said calibration voltage setting circuit comprises;

    a monitor thin film transistor formed on the substrate and comprising a second oxide semiconductor layer being made of the same oxide semiconductor material as the oxide semiconductor layer of said oxide semiconductor thin film transistor, said monitor thin film transistor having a gate electrode, a source electrode, and a drain electrode;

    a detection circuit that is configured to measure device characteristics of said monitor thin film transistor; and

    a voltage determination circuit that determines said voltage to be applied to the calibration electrode in accordance with said device characteristics that are measured by the detection circuit.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×