Integrated device with memory systems accessible via basic and bypass routes

• US 9,400,762 B2
• Filed: 02/16/2012
• Issued: 07/26/2016
• Est. Priority Date: 09/07/2005
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kashiwaya, Motofumi
• Primary Examiner(s): Queler, Adam M
• Assistant Examiner(s): SIMONETTI, NICHOLAS J
• Application Number:
  US13/397,938
• Publication Number:
  US 20120159089A1
• Time in Patent Office: 1,622 Days
• Field of Search: 326/41, 326/101, 327/565, 365/51, 365/52, 365/63, 365/189.04, 365/203.03, 710305-317
• US Class Current: 1/1
• CPC Class Codes: G06F 13/4022 using switching circuits, e.g. switching matrix, connection or expansion network G06F13/4009 takes precedence

Abstract

An integrated device able to simplify interconnects up to memories, able to prevent a reduction of performance due to an increase of area and longer interconnects, and able to speed up memory access. An input/output port of a processing module, memory interfaces, and memory banks are connected by connection interconnects arranged in a matrix in a first direction and a second direction above an arrangement region of a plurality of memory macros. As connection interconnects, command information interconnects and data interconnects are included. The command information interconnects are formed by private interconnects, while the data interconnects are formed by private interconnects for at least the second direction interconnects.

Claims

1. An integrated device, comprising:

memory systems, respectively including a plurality of unit memories able to be independently accessed;

at least one processing module configured to access the plurality of unit memories through an input/output port;

a memory interface, facing the processing module and centrally positioned between the memory systems and connected to the processing module and each unit memory by connection interconnects for interfacing data transfer between the unit memories and the processing module;

a connection interconnect layer including a bypass route and a basic route that connect in a stacking direction to the plurality of unit memories, wherein

the basic route is shared by the plurality of unit memories for selectively accessing an arbitrary unit memory of the plurality of unit memories by the at least one processing module by using public interconnects,

the bypass route is configured to access a predetermined unit memory of the plurality of unit memories by the at least one processing module by using a combination of private interconnects and the public interconnects,

the basic route and the bypass route provide simultaneous access routes to the predetermined unit memory,

the plurality of unit memories are positioned to be the shortest distance from the processing modules by being sandwiched between the memory interface and the processing module, and

the private interconnects are configured to individually connect one of the processing module to at least one of the memory systems.

2. An integrated device as set forth in claim 1, wherein the bypass route is utilized when shorter than a route length through the basic route.

3. An integrated device as set forth in claim 1, including:

a planar configuration formed by a memory layer at which the plurality of unit memories are arranged, wherein

the interconnect layer includes interconnects in the stacking direction configured to connect the memory layer and either the interconnects of the basic route, the interconnects of the bypass route, or combination thereof.

4. An integrated device as set forth in claim 3, wherein the interconnects of the bypass route include interconnects in the stacking direction connected to the middle of the basic route.

5. An integrated device as set forth in claim 3, wherein the interconnect layer includes interconnects of a planar direction forming part of either the basic route, the bypass route, or combination thereof.

6. An integrated device as set forth in claim 5, wherein the interconnects of the planar direction form part of interconnects of a matrix shape formed in the interconnect layer.

7. An integrated device as set forth in claim 1, including:

a planar configuration formed by a processing module layer in which the at least one processing module is arranged, wherein

the interconnect layer includes interconnects in the stacking direction configured to connect the processing module layer and either the interconnects of the basic route, the interconnects of the bypass route, or combination thereof.

8. An integrated device as set forth in claim 1, including:

a plurality of planar configurations arranged in parallel; and

interconnects of a normal direction connecting the plurality of planar configurations, wherein

the plurality of the planar configurations includes;

a processing module planar configuration in which the at least one processing module is arranged, and

a memory planar configuration in which the plurality of unit memories are arranged, and

the interconnects of the normal direction includes interconnects forming part of the basic route and the bypass route.

9. An integrated device as set forth in claim 1, including

a plurality of processing modules;

wherein which access route of the basic route and the bypass route is used is determined based on a relative position between the accessing processing module and the unit memory to be accessed.

10. An integrated device as set forth in claim 1, wherein the interconnects of the bypass route are configured as direct access interconnects from the at least one processing module to the plurality of unit memories.

11. An integrated device as set forth in claim 1, wherein the integrated device is configured to suppress the latency and an electric power to the lowest limit by the omission of the interconnects of the bypass route in a first direction.

12. An integrated device as set forth in claim 1, wherein the plurality of unit memories are configured to be accessed by the basic or bypass route via a second direction.