Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
First Claim
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1. A semiconductor memory array comprising:
- a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include;
a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory cell; and
a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto;
wherein said floating body has a first conductivity type selected from n-type conductivity type and p-type conductivity type;
said memory cell further comprising first and second regions at first and second locations of said memory cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
wherein said transfer is performed to said at least two of said memory cells in parallel.
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Abstract
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory including a bipolar resistive change element, and methods of operating.
228 Citations
20 Claims
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1. A semiconductor memory array comprising:
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a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include; a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory cell; and a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto; wherein said floating body has a first conductivity type selected from n-type conductivity type and p-type conductivity type; said memory cell further comprising first and second regions at first and second locations of said memory cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type; wherein said transfer is performed to said at least two of said memory cells in parallel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit comprising:
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a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include; a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory cell; and a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto; wherein said floating body has a first conductivity type selected from n-type conductivity type and p-type conductivity type; said memory cell further comprising first and second regions at first and second locations of said cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type; and a circuitry to perform said transfer. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor memory cell comprising:
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a bipolar device configured to store data when power is applied to said cell; and a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said bipolar device upon transfer thereto. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification