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Dual layer stack for contact formation

  • US 9,401,336 B2
  • Filed: 11/04/2014
  • Issued: 07/26/2016
  • Est. Priority Date: 11/04/2014
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device fabrication method comprising:

  • forming a liner layer upon a dielectric layer;

    forming an electrically conductive plating layer upon the liner layer;

    forming an epoxy trench barrier layer upon the plating layer;

    forming a photoresist layer upon the epoxy trench barrier layer;

    forming a contact trench within the photoresist layer and the epoxy trench barrier layer,wherein the formed contact trench creates photoresist layer portions and epoxy trench barrier layer portions, and wherein the contact trench exposes a portion of the electrically conductive plating layer;

    plating a contact upon the exposed plating layer within the contact trench, and;

    subsequent to plating the contact upon the plating layer within the contact trench,removing the photoresist layer portions while maintaining the epoxy trench barrier layer portions.

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