Semiconductor device including a diode arranged in a trench
First Claim
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1. A semiconductor device, comprising:
- a semiconductor body including a first trench region extending into the semiconductor body from a first surface of the semiconductor body;
an ESD (electrostatic static discharge) protection diode including an anode region and a cathode region; and
whereinone of the anode region and the cathode region is at least partly arranged in the first trench region, andthe other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region,the semiconductor device further comprising a field plate arranged on the first surface, the field plate overlapping a pn-junction comprising a p-doped region of the anode region abutting an n-doped region of the cathode region at the first surface,a contact located at the first surface and electrically connected to the one of the anode region and the cathode region at the first surface, andwherein the field plate and the contact are electrically connected.
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Abstract
One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.
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Citations
29 Claims
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1. A semiconductor device, comprising:
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a semiconductor body including a first trench region extending into the semiconductor body from a first surface of the semiconductor body; an ESD (electrostatic static discharge) protection diode including an anode region and a cathode region; and
whereinone of the anode region and the cathode region is at least partly arranged in the first trench region, and the other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region, the semiconductor device further comprising a field plate arranged on the first surface, the field plate overlapping a pn-junction comprising a p-doped region of the anode region abutting an n-doped region of the cathode region at the first surface, a contact located at the first surface and electrically connected to the one of the anode region and the cathode region at the first surface, and wherein the field plate and the contact are electrically connected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 28, 29)
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27. A semiconductor device, comprising:
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a semiconductor body including a first trench extending into the semiconductor body from a first surface of the semiconductor body; an ESD (electrostatic static discharge) protection diode including an anode region and a cathode region; and
whereinone of the anode region and the cathode region is at least partly arranged in the first trench, the other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn-junction in the semiconductor body and extending to the first surface, the semiconductor device further comprises a second trench at a lateral distance to the first trench and extending into the semiconductor body from the first surface, and the other one of the anode region and the cathode region is arranged at least partly in the second trench, and further comprising a conducting path of the ESD diode through a sidewall of the first trench and wherein the pn-junction extends along at least 50% of a depth of the first trench.
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Specification