Transistor
First Claim
1. A transistor comprising:
- a gate electrode layer;
a gate insulating layer in contact with the gate electrode layer;
a semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed between the semiconductor layer and the gate electrode layer;
a source electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions; and
a drain electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions,wherein the source electrode layer and the drain electrode layer are disposed such that the electrode tooth portions of the source electrode layer and the electrode tooth portions of the drain electrode layer face each other without interdigitating with each other,wherein a part of an end of a first electrode tooth portion of the electrode tooth portions of one of the source and drain electrode layers and a part of the connection portion adjacent to the first electrode tooth portion face an end of one of the electrode tooth portions of the other of the source and drain electrode layers,wherein the end of the first electrode tooth portion overlaps the gate electrode layer, andwherein the connection portion does not overlap the gate electrode layer.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a transistor having a novel electrode structure capable of substantially maintaining on-state current while parasitic capacitance generated in an overlap portion between a source electrode layer (a drain electrode layer) and a gate electrode layer is reduced. Parasitic capacitance is reduced by using a source electrode layer and a drain electrode in a comb shape in a transistor. Curved current flowing from side edges of electrode tooth portions can be generated by controlling the width of an end of a comb-shaped electrode layer or the interval between the electrode tooth portions. This curved current compensates for a decrease in linear current due to a comb electrode shape; thus, on-state current can be kept unchanged even when parasitic capacitance is reduced.
115 Citations
27 Claims
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1. A transistor comprising:
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a gate electrode layer; a gate insulating layer in contact with the gate electrode layer; a semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed between the semiconductor layer and the gate electrode layer; a source electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions; and a drain electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions, wherein the source electrode layer and the drain electrode layer are disposed such that the electrode tooth portions of the source electrode layer and the electrode tooth portions of the drain electrode layer face each other without interdigitating with each other, wherein a part of an end of a first electrode tooth portion of the electrode tooth portions of one of the source and drain electrode layers and a part of the connection portion adjacent to the first electrode tooth portion face an end of one of the electrode tooth portions of the other of the source and drain electrode layers, wherein the end of the first electrode tooth portion overlaps the gate electrode layer, and wherein the connection portion does not overlap the gate electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A transistor comprising:
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a gate electrode layer; a gate insulating layer in contact with the gate electrode layer; a semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed between the semiconductor layer and the gate electrode layer; a source electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions; and a drain electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions, wherein the source electrode layer and the drain electrode layer are disposed such that the electrode tooth portions of the source electrode layer and the electrode tooth portions of the drain electrode layer face each other, wherein a part of an end of a first electrode tooth portion of the electrode tooth portions of one of the source and drain electrode layers and a part of the connection portion adjacent to the first electrode tooth portion face an end of one of the electrode tooth portions of the other of the source and drain electrode layers, wherein the end of the first electrode tooth portion overlaps the gate electrode layer, and wherein the semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A transistor comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a semiconductor layer over the gate insulating layer; a source electrode layer in a comb shape over the semiconductor layer, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions; and a drain electrode layer in a comb shape over the semiconductor layer, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions, wherein the source electrode layer and the drain electrode layer are disposed such that the electrode tooth portions of the source electrode layer and the electrode tooth portions of the drain electrode layer face each other, wherein a part of an end of a first electrode tooth portion of the electrode tooth portions of one of the source and drain electrode layers and a part of the connection portion adjacent to the first electrode tooth portion face an end of one of the electrode tooth portions of the other of the source and drain electrode layers, wherein the end of the first electrode tooth portion overlaps the gate electrode layer, and wherein the semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A device comprising:
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a transistor comprising; a gate electrode layer; a gate insulating layer in contact with the gate electrode layer; a semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed between the semiconductor layer and the gate electrode layer; a source electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions; and a drain electrode layer in a comb shape, including electrode tooth portions arranged adjacently at a predetermined interval and a connection portion for connecting the electrode tooth portions, wherein the source electrode layer and the drain electrode layer are disposed such that the electrode tooth portions of the source electrode layer and the electrode tooth portions of the drain electrode layer face each other, wherein a part of an end of a first electrode tooth portion of the electrode tooth portions of one of the source and drain electrode layers and a part of the connection portion adjacent to the first electrode tooth portion face an end of one of the electrode tooth portions of the other of the source and drain electrode layers, wherein the end of the first electrode tooth portion overlaps the gate electrode layer, and wherein the connection portion does not overlap the gate electrode layer. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification