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P-side layers for short wavelength light emitters

  • US 9,401,452 B2
  • Filed: 09/14/2012
  • Issued: 07/26/2016
  • Est. Priority Date: 09/14/2012
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a p-side heterostructure comprising a short period superlattice (SPSL) including alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow

    xhigh

    0.9 and each layer of the SPSL has a thickness of less than or equal to six bi-layers of AlGaN, each bi-layer being one layer of Al and Ga atoms and one layer of N atoms and having a thickness of 0.25 nm;

    an n-side heterostructure; and

    an active region configured to emit light disposed between the SPSL and the n-side heterostructure, whereina difference between xlow and xhigh in the alternating layers causes modulation of a valance band edge energy in the SPSL, andthe modulation of the valence band edge energy in the SPSL is at least an acceptor energy level of the p-type dopant.

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