Acoustic resonator device with air-ring and temperature compensating layer
First Claim
1. A bulk acoustic wave (BAW) resonator device, comprising:
- a substrate;
a bottom electrode formed over the substrate;
a piezoelectric layer formed on the bottom electrode;
a top electrode formed on the piezoelectric layer;
an air-wing and an air-bridge formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device; and
a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the temperature compensation feature located in one of the top electrode, the piezoelectric layer or the bottom electrode,wherein the temperature compensation feature extends outside the active region by a predetermined length.
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Accused Products
Abstract
A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.
32 Citations
20 Claims
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1. A bulk acoustic wave (BAW) resonator device, comprising:
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a substrate; a bottom electrode formed over the substrate; a piezoelectric layer formed on the bottom electrode; a top electrode formed on the piezoelectric layer; an air-wing and an air-bridge formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device; and a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the temperature compensation feature located in one of the top electrode, the piezoelectric layer or the bottom electrode, wherein the temperature compensation feature extends outside the active region by a predetermined length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A bulk acoustic wave (BAW) resonator device, comprising:
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a substrate; a bottom electrode formed over the substrate; a piezoelectric layer formed on the bottom electrode; a top electrode formed on the piezoelectric layer; an air-wing and an air-bridge formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device; and a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, wherein the temperature compensation feature extends outside the active region by a predetermined length, wherein the temperature compensation feature comprises a temperature compensating layer located between the bottom electrode and the piezoelectric layer, and wherein an outer edge of the temperature compensating layer is located beyond the inner edge of the air-wing by the predetermined length.
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14. A bulk acoustic wave (BAW) resonator device, comprising:
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a substrate defining a cavity; a bottom electrode formed over the substrate and at least a portion of the cavity; a piezoelectric layer formed on the bottom electrode; a top electrode formed on the piezoelectric layer; an outer frame formed on or in the top electrode, the outer frame having an inner edge that defines an outer boundary of an active region of the BAW resonator device; an air-wing and an air-bridge formed between the piezoelectric layer and the top electrode; and a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of at least the piezoelectric layer, wherein the temperature compensation feature extends outside the active region by a predetermined length. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification