Acoustic resonator having collar structure
First Claim
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1. A bulk acoustic wave (BAW) resonator structure, comprising:
- a substrate comprising a trench;
a first electrode disposed over the substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer;
a collar structure comprising a dielectric material of predetermined width and height disposed around a perimeter of an active region, which is defined by an overlap between the first electrode, the second electrode, the piezoelectric layer, and the trench; and
a first planarization layer formed on the piezoelectric layer adjacent to the second electrode, the first planarization layer comprising a first layer having a first acoustic impedance and a second layer formed on the first layer and having a second acoustic impedance lower than the first acoustic impedance.
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Abstract
A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.
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Citations
46 Claims
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1. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising a trench; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; a collar structure comprising a dielectric material of predetermined width and height disposed around a perimeter of an active region, which is defined by an overlap between the first electrode, the second electrode, the piezoelectric layer, and the trench; and a first planarization layer formed on the piezoelectric layer adjacent to the second electrode, the first planarization layer comprising a first layer having a first acoustic impedance and a second layer formed on the first layer and having a second acoustic impedance lower than the first acoustic impedance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; and a collar structure comprising a dielectric material of predetermined width and height disposed around a perimeter of an active region which is defined by an overlap between the first electrode, the second electrode and the piezoelectric layer, the collar structure having an inner edge that is substantially aligned with an outer edge of the second electrode, wherein the collar structure is disposed on the first electrode, or between the first electrode and the piezoelectric layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A bulk acoustic wave (BAW) resonator structure, comprising:
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a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; and a collar structure comprising a dielectric material of predetermined width and height disposed around a perimeter of an active region which is defined by an overlap between the first electrode, the second electrode and the piezoelectric layer, the collar structure having a cutoff frequency that is substantially the same as a cutoff frequency of the active region. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising a trench; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; and a collar structure disposed around a perimeter of an active region, which is defined by an overlap between the first electrode, the second electrode, the piezoelectric layer, and the trench, wherein the collar structure comprises a region of dielectric material having a predetermined thickness and width, and having a cutoff frequency substantially matched to a cutoff frequency of the active region. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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Specification