Methods and apparatus for temperature control of devices and mechanical resonating structures

• US 9,401,693 B2
• Filed: 02/27/2013
• Issued: 07/26/2016
• Est. Priority Date: 06/04/2009
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Schoepf, Klaus Juergen, Rebel, Reimund
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US13/779,416
• Publication Number:
  US 20140062262A1
• Time in Patent Office: 1,245 Days
• Field of Search: 333/186, 333/188, 333/200, 310/346
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H03H 2009/241 Bulk-mode MEMS resonators
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/08 Holders with means for regulating temperature
• CPC Class Codes: H03H 9/1057 for microelectro-mechanical devices
• CPC Class Codes: H03H 9/2405 of microelectro-mechanical resonators

Abstract

Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

Claims

1. A device, comprising:

a substrate;

a piezoelectric mechanical resonating structure suspended above the substrate by first and second anchors and having

a first surface proximate the substrate;

a second surface substantially opposite the first surface and distal the substrate, the piezoelectric mechanical resonating structure comprising a first layer of material adjacent the second surface; and

two free ends substantially opposite each other;

an electrode configured to excite vibrations in the piezoelectric mechanical resonating structure;

a heating element, comprising a metal or a doped semiconductor, directly contacting the mechanical resonating structure and disposed between the substrate and the first layer of material adjacent the second surface, the heating element configured to alter a temperature of the piezoelectric mechanical resonating structure; and

a temperature sensor configured to detect the temperature of the mechanical resonating structure.

2. The device of claim 1, wherein the heating element comprises the metal.

3. The device of claim 1, wherein the heating element comprises the doped semiconductor.

4. The device of claim 1, wherein the heating element is disposed within the mechanical resonating structure.

5. The device of claim 1, wherein the heating element is disposed on the first surface of the mechanical resonating structure.

6. The device of claim 1, wherein the heating element and temperature sensor are configured in a feedback loop.

7. The device of claim 6, further comprising temperature control circuitry coupled to the temperature sensor and the heating element, and configured to receive an output signal of the temperature sensor indicative of the temperature of the piezoelectric mechanical resonating structure and to provide a control signal to the heating element to adjust an amount of heat produced by the heating element to set the temperature of the piezoelectric mechanical resonating structure to a target value.

8. The device of claim 1, wherein the temperature sensor is a first temperature sensor, and wherein the device further comprises a second temperature sensor.

9. The device of claim 1, wherein the two free ends are separated by a distance that is an integer multiple of one-half an acoustic wavelength of a Lamb wave supported by the piezoelectric mechanical resonating structure.

10. A method of operating a device having a piezoelectric mechanical resonating structure suspended above a substrate, the piezoelectric mechanical resonating structure having a first surface proximate the substrate and a second surface substantially opposite the first surface and distal the substrate, the piezoelectric mechanical resonating structure comprising a first layer of material adjacent the second surface, the method comprising:

exciting a Lamb wave in the piezoelectric mechanical resonating structure;

heating the piezoelectric mechanical resonating structure while exciting the Lamb wave by generating heat from a heating element disposed between the substrate and the first layer of material adjacent the second surface; and

sensing a temperature of the piezoelectric mechanical resonating structure using a temperature sensor.

11. The method of claim 10, further comprising establishing a feedback loop by providing an indication of the temperature from the temperature sensor to temperature control circuitry and using a control signal from the temperature control circuitry to control the heating of the piezoelectric mechanical resonating structure.

12. The method of claim 10, wherein heating the piezoelectric mechanical resonating structure comprises heating the piezoelectric mechanical resonating structure from within the piezoelectric mechanical resonating structure.

13. The method of claim 10, wherein the heating element is disposed on the first surface, and wherein heating the piezoelectric mechanical resonating structure comprises heating the piezoelectric mechanical resonating structure from the first surface.

14. The method of claim 10, wherein the heating element is a first heating element, and wherein the method further comprises heating the piezoelectric mechanical resonating structure with a second heating element disposed on the substrate.

15. A device, comprising:

a piezoelectric mechanical resonating structure suspended above a substrate by anchors coupled to first and second sides of the piezoelectric mechanical resonating structure;

a plurality of electrodes configured to excite a Lamb wave in the piezoelectric mechanical resonating structure;

a heating element disposed proximate a surface of the piezoelectric mechanical resonating structure facing the substrate; and

a temperature sensor configured to detect a temperature of the mechanical resonating structure.

16. The device of claim 15, wherein the heating element is disposed within the mechanical resonating structure.

17. The device of claim 15, wherein the heating element and temperature sensor are configured in a feedback loop.

18. The device of claim 15, wherein the heating element is disposed on the surface of the mechanical resonating structure facing the substrate.

19. The device of claim 15, wherein the heating element comprises a doped semiconductor.

20. The device of claim 15, further comprising temperature control circuitry coupled to the temperature sensor and the heating element, and configured to receive an output signal of the temperature sensor indicative of the temperature of the piezoelectric mechanical resonating structure and to provide a control signal to the heating element to adjust an amount of heat produced by the heating element to set the temperature of the piezoelectric mechanical resonating structure to a target value.