Programmable logic device

• US 9,401,714 B2
• Filed: 10/11/2013
• Issued: 07/26/2016
• Est. Priority Date: 10/17/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kurokawa, Yoshiyuki
• Primary Examiner(s): Crawford, Jason M
• Assistant Examiner(s): Bahr, Kurtis R
• Application Number:
  US14/052,193
• Publication Number:
  US 20140103960A1
• Time in Patent Office: 1,019 Days
• US Class Current: 1/1
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/17736 Structural details of routing resources
• CPC Class Codes: H03K 19/1776 for memories

Abstract

To obtain a PLD that achieves high-speed configuration capable of dynamic configuration, consumes less power, and has a short startup time and a PLD that has a smaller number of transistors or a smaller circuit area than a PLD using an SRAM as a configuration memory, a plurality of logic elements arranged in an array and a switch for selecting electrical connection between the logic elements are provided. The switch includes a first transistor including a multilayer film including an oxide layer and an oxide semiconductor layer, a node that becomes floating when the first transistor is turned off, and a second transistor in which electrical continuity between a source and a drain is determined based on configuration data held at the node.

Claims

1. A semiconductor device comprising:

a first programmable logic element;

a second programmable logic element;

a switch comprising a first circuit group and a second circuit group; and

a first wiring,

wherein each of the first circuit group and the second circuit group comprises a first transistor and a second transistor,

wherein a first terminal of the first transistor of each of the first circuit group and the second circuit group is electrically connected to a gate of the second transistor of the corresponding one of the first circuit group and the second circuit group,

wherein a second terminal of the first transistor of each of the first circuit group and the second circuit group is electrically connected to the first wiring,

wherein a first terminal of the second transistor of each of the first circuit group and the second circuit group is electrically connected to the first programmable logic element,

wherein a second terminal of the second transistor of each of the first circuit group and the second circuit group is electrically connected to the second programmable logic element,

wherein the switch comprises a third transistor configured to short the first programmable logic element and the second programmable logic element when data is written into the gate of the second transistor of each of the first circuit group and the second circuit group,

wherein the first transistor comprises a gate electrode and a multilayer film with a gate insulating film therebetween,

wherein the multilayer film comprises a first oxide layer, an oxide semiconductor layer over the first oxide layer and comprising a channel formation region, and a second oxide layer over the oxide semiconductor layer, and

wherein the first oxide layer and the second oxide layer have a larger energy gap than the oxide semiconductor layer and comprise indium.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium.

3. The semiconductor device according to claim 1, wherein energy of a bottom of a conduction band of the first oxide layer is closer to vacuum level than that of the oxide semiconductor layer.

4. The semiconductor device according to claim 1, wherein energy of a bottom of a conduction band of the first oxide layer is closer to vacuum level than that of the oxide semiconductor layer by 0.05 eV or more and 2 eV or less.

5. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer, the first oxide layer, and the second oxide layer comprise an In-M-Zn oxide, where M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, and

wherein an atomic ratio of In to M of the first oxide layer is lower than that of the oxide semiconductor layer.

6. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer comprises an In—

Zn oxide, an In—

Ga oxide, or an In—

Ga—

Zn oxide.

7. A semiconductor device comprising:

a first programmable logic element;

a second programmable logic element;

a switch comprising a plurality of circuit groups; and

a first wiring,

wherein each of the plurality of circuit groups comprises a first transistor, a second transistor, and a third transistor,

wherein a first terminal of the first transistor of each of the plurality of circuit groups is electrically connected to a gate of the second transistor of the corresponding one of the plurality of circuit groups,

wherein a second terminal of the first transistor of each of the plurality of circuit groups is electrically connected to the first wiring,

wherein a first terminal of the second transistor of each of the plurality of circuit groups is electrically connected to the first programmable logic element,

wherein a second terminal of the second transistor of each of the plurality of circuit groups is electrically connected to a first terminal of the third transistor of each of the plurality of circuit groups,

wherein a second terminal of the third transistor of each of the plurality of circuit groups is electrically connected to the second programmable logic element,

wherein the switch comprises a fourth transistor configured to short the first programmable logic element and the second programmable logic element when data is written into the gate of the second transistor of each of the plurality of circuit groups,

wherein the first transistor comprises a gate electrode and a multilayer film with a gate insulating film therebetween,

wherein the multilayer film comprises a first oxide layer, an oxide semiconductor layer over the first oxide layer and comprising a channel formation region, and a second oxide layer over the oxide semiconductor layer, and

wherein the first oxide layer and the second oxide layer have a larger energy gap than the oxide semiconductor layer and comprise indium.

8. A semiconductor device comprising:

a first programmable logic element;

a second programmable logic element;

a switch comprising a plurality of circuit groups; and

a first wiring,

wherein each of the plurality of circuit groups comprises a first transistor and a second transistor,

wherein a first terminal of the first transistor of each of the plurality of circuit groups is electrically connected to a gate of the second transistor of the corresponding one of the plurality of circuit groups,

wherein a second terminal of the first transistor of each of the plurality of circuit groups is electrically connected to the first wiring,

wherein a first terminal of the second transistor of each of the plurality of circuit groups is electrically connected to the first programmable logic element,

wherein a second terminal of the second transistor of each of the plurality of circuit groups is electrically connected to the second programmable logic element,

wherein the switch comprises a third transistor configured to short the first programmable logic element and the second programmable logic element when data is written into the gate of the second transistor of each of the plurality of circuit groups,

wherein the first transistor comprises a gate electrode and a multilayer film with a gate insulating film therebetween,

wherein the multilayer film comprises a first oxide layer, an oxide semiconductor layer over the first oxide layer, and a second oxide layer over the oxide semiconductor layer,

wherein the oxide semiconductor layer comprises a channel formation region, and

wherein the first oxide layer and the second oxide layer have a larger energy gap than the oxide semiconductor layer and comprise indium.

9. The semiconductor device according to claim 8, wherein the oxide semiconductor layer comprises indium.

10. The semiconductor device according to claim 8, wherein energy of a bottom of a conduction band of the first oxide layer is closer to vacuum level than that of the oxide semiconductor layer.

11. The semiconductor device according to claim 8,

wherein the oxide semiconductor layer, the first oxide layer, and the second oxide layer comprise an In-M-Zn oxide, where M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, and

wherein an atomic ratio of In to M of the first oxide layer is lower than that of the oxide semiconductor layer.

12. The semiconductor device according to claim 8, wherein the oxide semiconductor layer comprises an In—

Zn oxide, an In—

Ga oxide, or an In—

Ga—

Zn oxide.