Semiconductor module

• US 9,402,314 B2
• Filed: 11/18/2013
• Issued: 07/26/2016
• Est. Priority Date: 12/11/2012
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Maruyama, Masashi
• Primary Examiner(s): Norris, Jeremy C
• Assistant Examiner(s): MILAKOVICH, NATHAN J
• Application Number:
  US14/082,414
• Publication Number:
  US 20140160693A1
• Time in Patent Office: 981 Days
• Field of Search: 361/748
• US Class Current: 1/1
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/68 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H05K 1/0228 Compensation of cross-talk by a mutually correlated lay-out of printed circuit traces, e.g. for compensation of cross-talk in mounted connectors balanced signal pairs H05K1/0245
• CPC Class Codes: H05K 1/0298 Multilayer circuits
• CPC Class Codes: H05K 1/165 incorporating printed inductors
• CPC Class Codes: H05K 2201/09972 Partitioned, e.g. portions of a PCB dedicated to different functions; Boundary lines therefore; Portions of a PCB being processed separately or differently
• CPC Class Codes: H05K 2201/10015 Non-printed capacitor
• CPC Class Codes: H05K 2201/1003 Non-printed inductor
• CPC Class Codes: H05K 2201/10098 Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas
• CPC Class Codes: H05K 3/4611 by laminating two or more circuit boards H05K3/4652 takes precedence

Abstract

A semiconductor module includes a circuit substrate, a first semiconductor device substrate that is mounted on the circuit substrate and that processes an input signal of a first frequency band, a second semiconductor device substrate that is mounted on the circuit substrate and that processes an input signal of a second frequency band, and a control device substrate that is arranged between the first and second semiconductor device substrates and that controls the first and second semiconductor device substrates.

Claims

1. A semiconductor module comprising:

a circuit substrate;

a first semiconductor device substrate that is mounted on the circuit substrate and that processes an input signal of a first frequency band;

a second semiconductor device substrate that is mounted on the circuit substrate and that processes an input signal of a second frequency band; and

a control device substrate that is arranged between the first and second semiconductor device substrates and that controls the first and second semiconductor device substrates;

a first matching circuit that is mounted on the circuit substrate and that is provided between the first semiconductor substrate and an outside of the semiconductor module; and

a second matching circuit that is mounted on the circuit substrate and that is provided between the second semiconductor substrate and the outside of the semiconductor module;

wherein

the first and second matching circuits are arranged on a same side on the circuit substrate; and

a common electrode that is connected between a terminal of a capacitor of the first matching circuit and a terminal of a capacitor of the second matching circuit is connected to a ground potential.

2. The semiconductor module according to claim 1, wherein

the first and second semiconductor device substrates each include an input terminal and an output terminal;

the first matching circuit is arranged to connect the output terminal of the first semiconductor substrate to a terminal that is connected to the outside of the semiconductor module; and

the second matching circuit is arranged to connect the output terminal of the second semiconductor substrate to a terminal that is connected to the outside of the semiconductor module.

3. The semiconductor module according to claim 1, wherein first and second wiring lines are arranged such that a magnetic field generated by the first wiring line connected to the first semiconductor substrate is perpendicular or substantially perpendicular to a magnetic field generated by the second wiring line connected to the second semiconductor substrate.

4. The semiconductor module according to claim 3, wherein

the circuit substrate is a multilayer substrate;

the first wiring line includes a helical or substantially helical wiring line extending across a plurality of layers of the multilayer substrate; and

the second wiring line includes a coil located on a surface of the multilayer substrate.

5. The semiconductor module according to claim 4, wherein the coil includes a line member whose surface is covered by an insulating film, the line member is exposed and is not covered by the insulating film over a plurality of turns at each end of the coil, pieces of the line member corresponding to the plurality of turns at each of the exposed portions are electrically connected laterally to one another, and the line member is wound around an axis that is parallel or substantially parallel with a main surface of the circuit substrate.

6. The semiconductor module according to claim 1, wherein a circuit layout of the first semiconductor substrate is a circuit layout that is a substantially mirror-reverse circuit layout of the second semiconductor substrate with respect to the control device substrate.

7. The semiconductor module according to claim 1, wherein the circuit substrate is one of a multilayer substrate and a single-layer substrate.

8. The semiconductor module according to claim 1, wherein each of the first and second semiconductor device substrates is a power amplifier circuit.

9. The semiconductor module according to claim 8, wherein each of the power amplifier circuits includes power amplifiers that define a two-stage amplifier circuit.

10. The semiconductor module according to claim 1, wherein the control device includes a bias control integrated circuit arranged to supply a bias voltage to the first and second semiconductor device substrates.

11. The semiconductor module according to claim 4, wherein the coil is an air-core coil.

12. The semiconductor module according to claim 1, wherein the capacitor of the first matching circuit and the capacitor of the second matching circuit are chip capacitors mounted on the circuit substrate.

13. The semiconductor module according to claim 12, further comprising a ground between the chip capacitors.

14. A transmission unit comprising:

a baseband unit;

an RF processing unit;

an antenna;

a front end unit; and

a power amplifier module defined by the semiconductor module according to claim 1.

15. A communication apparatus comprising the transmission unit according to claim 14.

16. A communication apparatus comprising the semiconductor module according to claim 9.