Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
First Claim
Patent Images
1. An ultralow defect gallium-containing nitride crystal comprising:
- gallium and nitrogen and having a wurtzite crystal structure;
a first large area surface and a second large area surface being on the opposite sides of the crystal, and the first large area surface and the second large area surface being substantially parallel to one another and having a maximum dimension greater than about 10 millimeters;
whereinthe first large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −
60 degrees and about +60 degrees toward a [0001]+c-direction and by up to about 10 degrees toward an orthogonal <
1-210>
a-direction;
at least one of the first large area surface and the second large area surface is characterized by a dislocation density below about 104 cm−
2 and by a stacking fault concentration below about 10 cm−
1, as determined by etching, in a solution comprising one or more of H3 PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4, at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours;
wherein the temperature and the time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers; and
the crystal comprises at least two single crystal domains having a gallium-containing nitride composition, wherein the at least two single crystal domains comprise a dislocation density within the domain less than about 104 cm−
2, are separated by a line of dislocations with a linear density less than about 1×
105 cm−
1, a polar misorientation angle γ
between the first domain and the second domain is between about 0.01 degree and about 0.5 degree, and azimuthal misorientation angles α and
β
are between about 0.01 degree and about 1 degree.
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Abstract
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
192 Citations
11 Claims
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1. An ultralow defect gallium-containing nitride crystal comprising:
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gallium and nitrogen and having a wurtzite crystal structure; a first large area surface and a second large area surface being on the opposite sides of the crystal, and the first large area surface and the second large area surface being substantially parallel to one another and having a maximum dimension greater than about 10 millimeters;
whereinthe first large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −
60 degrees and about +60 degrees toward a [0001]+c-direction and by up to about 10 degrees toward an orthogonal <
1-210>
a-direction;at least one of the first large area surface and the second large area surface is characterized by a dislocation density below about 104 cm−
2 and by a stacking fault concentration below about 10 cm−
1, as determined by etching, in a solution comprising one or more of H3 PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4, at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours;
wherein the temperature and the time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers; andthe crystal comprises at least two single crystal domains having a gallium-containing nitride composition, wherein the at least two single crystal domains comprise a dislocation density within the domain less than about 104 cm−
2, are separated by a line of dislocations with a linear density less than about 1×
105 cm−
1, a polar misorientation angle γ
between the first domain and the second domain is between about 0.01 degree and about 0.5 degree, and azimuthal misorientation angles α and
β
are between about 0.01 degree and about 1 degree. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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Current AssigneeSL Technology Incorporated (Reliv' International, Inc.)
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Original AssigneeSoraa, Inc.
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InventorsD'Evelyn, Mark P., Ehrentraut, Dirk, Jiang, Wenkan, Downey, Bradley C.
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Primary Examiner(s)AUER, LAURA A
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Application NumberUS13/600,191Publication NumberTime in Patent Office1,433 DaysField of SearchUS Class Current1/1CPC Class CodesC30B 25/02 Epitaxial-layer growthC30B 25/18 characterised by the substrateC30B 25/20 the substrate being of the ...C30B 29/403 AIII-nitridesC30B 29/406 Gallium nitrideC30B 33/00 After-treatment of single c...C30B 33/06 Joining of crystalsC30B 7/105 using ammonia as solvent, i...H01L 29/045 by their particular orienta...H01L 29/2003 Nitride compoundsH01L 31/03044 comprising a nitride compou...H01L 33/32 containing nitrogenH01S 2304/00 Special growth methods for ...H01S 5/32341 blue laser based on GaN or GaPY02E 10/544 Solar cells from Group III-...Y02P 70/50 Manufacturing or production...Y10T 428/24355 Continuous and nonuniform o...
