Storage apparatus provided with a plurality of nonvolatile semiconductor storage media and storage control method

• US 9,405,478 B2
• Filed: 02/08/2012
• Issued: 08/02/2016
• Est. Priority Date: 02/08/2012
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Koseki, Hideyuki, Ogawa, Junji
• Primary Examiner(s): Rones, Charles
• Assistant Examiner(s): Wong, Nanci
• Application Number:
  US13/391,728
• Publication Number:
  US 20130205070A1
• Time in Patent Office: 1,637 Days
• Field of Search: 711/103
• US Class Current: 1/1
• CPC Class Codes: G06F 3/0605 by facilitating the interaction with a user or administrator
• CPC Class Codes: G06F 3/0608 Saving storage space on storage systems
• CPC Class Codes: G06F 3/0616 in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
• CPC Class Codes: G06F 3/0647 Migration mechanisms
• CPC Class Codes: G06F 3/0659 Command handling arrangements, e.g. command buffers, queues, command scheduling
• CPC Class Codes: G06F 3/0665 at area level, e.g. provisioning of virtual or logical volumes
• CPC Class Codes: G06F 3/067 Distributed or networked storage systems, e.g. storage area networks [SAN], network attached storage [NAS]
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays

Abstract

A storage apparatus is provided with a plurality of nonvolatile semiconductor storage media and a storage controller that is a controller that is coupled to the plurality of semiconductor storage media. The storage controller identifies a first semiconductor storage unit that is at least one semiconductor storage media and a second semiconductor storage unit that is at least one semiconductor storage media and that is provided with a remaining length of life shorter than that of the first semiconductor storage unit based on the remaining life length information that has been acquired. The storage controller moreover identifies a first logical storage region for the first semiconductor storage unit and a second logical storage region that is provided with a write load higher than that of the first logical storage region for the second semiconductor storage unit based on the statistics information that indicates the statistics that is related to a write for every logical storage region. The storage controller reads data from the first logical storage region and the second logical storage region, and writes data that has been read from the first logical storage region to the second logical storage region and/or writes data that has been read from the second logical storage region to the first logical storage region.

Claims

1. A storage control method for a storage apparatus including a storage controller and a plurality of nonvolatile semiconductor storage units, each including a plurality of nonvolatile semiconductor memory chips, each of the plurality of nonvolatile semiconductor memory chips including a plurality of blocks, the method comprising the steps of:

managing life length information based on at least erasing frequency of the plurality of blocks and providing logical storage regions corresponding to the plurality of nonvolatile semiconductor memory chips;

writing data to a nonvolatile semiconductor storage unit that is a basis of a logical storage region of a write destination of a plurality of logical storage regions;

sending a request to each of the nonvolatile semiconductor storage units for acquiring the life length information;

sending the life length information to the storage controller in response to the request;

identifying, based on the life length information, a first nonvolatile semiconductor storage unit, and a second nonvolatile semiconductor storage unit that has a remaining length of life longer than a remaining length of life of the first nonvolatile semiconductor storage unit;

transferring data from a first logical storage region of the first nonvolatile semiconductor storage unit to a second logical storage region of the second nonvolatile semiconductor storage unit;

determining whether the remaining life length of a particular nonvolatile semiconductor storage unit is shorter than a remaining guarantee period;

moving, when it is determined that the remaining life length of the particular nonvolatile semiconductor storage unit is shorter than the remaining guarantee period, data to a hard disk drive (HDD) that is free of an upper limit of rewriting, wherein;

the plurality of nonvolatile semiconductor storage units configure a plurality of nonvolatile semiconductor storage RAID groups,

a plurality of HDDs configure a HDD RAID group, and

data is moved between the nonvolatile semiconductor storage RAID groups and the HDD RAID group in a unit of an extent;

determining whether the remaining life length of a first nonvolatile semiconductor storage RAID group is shorter than a remaining guarantee period of the first nonvolatile semiconductor storage RAID group;

moving, when it is determined that the remaining life length of the first nonvolatile semiconductor storage RAID group is shorter than the remaining guarantee period of the first nonvolatile semiconductor storage RAID group, data to a second nonvolatile semiconductor storage RAID group having a remaining life length that is longer than a remaining guarantee period of the second nonvolatile semiconductor storage RAID group;

determining whether the remaining life length of all of the nonvolatile semiconductor storage RAID groups is shorter than a remaining guarantee period of all of the nonvolatile semiconductor storage RAID groups; and

moving, when it is determined that the remaining life length of all of the nonvolatile semiconductor storage RAID groups is shorter than the remaining guarantee period of all of the nonvolatile semiconductor storage RAID groups, data to the HDD RAID group.

3. The storage apparatus according to claim 1, wherein each of the nonvolatile semiconductor storage units is a basis of a logical storage region.

4. The storage apparatus according to claim 1, wherein:

the storage controller is configured to;

acquire the life length information from each of the nonvolatile semiconductor memory chips on a regular basis or on an irregular basis for instance and store the life length information that has been acquired from each nonvolatile semiconductor memory chip,

store statistics information that is related to a write for the first and second logical storage regions and store remaining life length information that is related to a remaining length of life of each of the nonvolatile semiconductor memory chips for the plurality of nonvolatile semiconductor memory chips,

identify the first logical storage region for the first nonvolatile semiconductor storage unit and the second logical storage region that is provided with a write load higher than a write load of the first logical storage region for the second nonvolatile semiconductor storage unit based on the statistics information that is related to a write for the first and second logical storage regions, and

read data from a first logical storage region and a second logical storage region, and write data that has been read from the first logical storage region to the second logical storage region or write data that has been read from the second logical storage region to the first logical storage region.

5. The storage apparatus according to claim 4, wherein:

the life length information for each nonvolatile semiconductor memory chip includes a numerical value that is related to a remaining length of life of the nonvolatile semiconductor memory chip as the remaining life length information and is information in a unit larger than a minimum unit of a storage region that is included in the nonvolatile semiconductor memory chip, and

the storage controller is configured to predict a remaining length of life of the nonvolatile semiconductor memory chip based on the numerical value in the life length information that has been acquired at a first point of time and the numerical value in the life length information that has been acquired at a second point of time before the first point of time for each of the nonvolatile semiconductor memory chips.

6. The storage apparatus according to claim 5, wherein:

a write load for a logical storage region based on the nonvolatile semiconductor memory chips conforms to a write amount that is a total amount of data that has been transmitted to the logical storage region as a write destination.

7. The storage apparatus according to claim 6, wherein:

the write load for the logical storage region is based on the write amount and a predicted write increase-decrease rate that is obtained based on the statistics information by the storage controller, and

the predicted write increase-decrease rate for the logical storage region is obtained based on the statistics information that is related to a write to the logical storage region.

8. The storage apparatus according to claim 7, wherein:

the statistics information that is related to the write to the logical storage region includes an average size of data that conforms to the write to the logical storage region or whether a write destination of the write to the logical storage region is sequential or random.

9. The storage apparatus according to claim 5, wherein:

the plurality of RAID groups include the plurality of nonvolatile semiconductor memory chips,

each nonvolatile semiconductor storage unit is a RAID group,

at least two logical storage region groups are defined for each of the plurality of RAID groups,

each of the at least two logical storage region groups is an aggregate of at least two logical storage regions that correspond to at least two nonvolatile semiconductor memory chips that configure the RAID group,

when the storage identifies, based on the life length information, the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit that has the remaining length of life longer than the remaining length of life of the first nonvolatile semiconductor storage unit, a first RAID group and a second RAID group that has a remaining length of life that is shorter than that of the first RAID group are identified based on a remaining length of life of each nonvolatile semiconductor memory chip,

the first RAID group and the second RAID group are the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit, respectively, and

when the storage controller identifies the first logical storage region and the second logical storage region that is provided with the write load higher than the write load of the first logical storage region based on the statistics information that is related to the write for each of the first and second logical storage regions, a first one of the at least two logical storage region groups is a logical storage region group based on the first RAID group and a second one of the at least two logical storage region groups is a logical storage region group based on the second RAID group.

10. The storage apparatus according to claim 9, wherein:

when for at least one of the first RAID group and the second RAID group, the at least two nonvolatile semiconductor memory chips, based on a logical storage region group to which the data read from one of the first and second logical storage regions has been written, vary in a remaining length of life and at least two logical storage regions that configure the logical storage region group vary in a write load, the storage controller is configured to exchange between the first logical storage region and the second logical storage region for an identical logical storage region group based on a write load of the at least two logical storage regions and a remaining length of life of the at least two nonvolatile semiconductor memory chips based on the logical storage region group to which the data read from one of the first and second logical storage regions has been written,

the first logical storage region is based on a first one of the at least two nonvolatile semiconductor memory chips,

the second logical storage region is based on a second one of the at least two nonvolatile semiconductor memory chips,

the second nonvolatile semiconductor memory chip is a nonvolatile semiconductor memory chip that has a remaining length of life that is shorter than a remaining length of life of the first nonvolatile semiconductor memory chip, and

the second logical storage region is a logical storage region that is provided with the write load that is higher than the write load of the first logical storage region.

11. The storage apparatus according to claim 10, wherein:

each logical storage region is configured by a plurality of stripe lines, and

in the case in which the data are exchanged between the first logical storage region and the second logical storage region for the identical logical storage region group based on the write load of the at least two logical storage regions and the remaining length of life of the at least two nonvolatile semiconductor memory chips based on the logical storage region group to which the data read from one of the first and second logical storage regions has been written, and at least two data that are stored into an identical stripe line are stored into an identical nonvolatile semiconductor memory chip, the storage controller is configured not to exchange data between the first logical storage region and the second logical storage region for the identical logical storage region group based on the write load of the at least two logical storage regions and the remaining length of life of the at least two nonvolatile semiconductor memory chips based on the logical storage region group to which the data read from one of the first and second logical storage regions has been written.

12. The storage apparatus according to claim 4, wherein:

the plurality of RAID groups include the plurality of nonvolatile semiconductor memory chips,

at least two logical storage region groups are defined for each of the plurality of RAID groups,

when the storage controller identifies, based on the life length information, the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit that has the remaining length of life longer than the remaining length of life of the first nonvolatile semiconductor, a first nonvolatile semiconductor memory chip in a first RAID group and a second nonvolatile semiconductor memory chip in a second RAID group that has a remaining length of life that is shorter than a remaining length of life of the first RAID group are identified based on a remaining length of life of each nonvolatile semiconductor memory chip,

the first nonvolatile semiconductor memory chip and the second nonvolatile semiconductor memory chip are the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit, respectively, and

when the storage controller identifies the first logical storage region for the first nonvolatile semiconductor storage unit and the second logical storage region that is provided with the write load higher than the write load of the first logical storage region for the second nonvolatile semiconductor storage unit based on the statistics information that is related to the write for the first and second logical storage regions, the first logical storage region is a logical storage region based on the first nonvolatile semiconductor memory chip and the second logical storage region is a logical storage region based on the second nonvolatile semiconductor memory chip.

13. The storage apparatus according to claim 12, wherein:

the storage controller is configured to provide a virtual volume that is configured by a plurality of virtual regions, allocate a logical storage region group to a virtual region of a write destination, and write data of a write target to the logical storage region group, and

when the storage controller reads the data from the first logical storage region and the second logical storage region, and write the data that has been read from the first logical storage region to the second logical storage region or write data that has been read from the second logical storage region to the first logical storage region, the second logical storage region is allocated to a first virtual region to which a logical storage region group based on the first RAID group has been allocated as substitute for the first storage region of the logical storage region group, or the first logical storage region is allocated to a second virtual region to which a logical storage region group based on the second RAID group has been allocated as substitute for the second storage region of the logical storage region group.

14. The storage apparatus according to claim 5, wherein:

the RAID group includes the plurality of nonvolatile semiconductor memory chips,

at least two logical storage regions are defined based on the RAID group,

when the storage controller identifies, based on the life length information, the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit that has the remaining length of life longer than the remaining length of life of the first nonvolatile semiconductor storage, a first nonvolatile semiconductor memory chip and a second nonvolatile semiconductor memory chip that are included in a first RAID group are identified based on a remaining length of life of each nonvolatile semiconductor memory chip,

the first nonvolatile semiconductor memory chip and the second nonvolatile semiconductor memory chip are the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit, respectively, and

when the storage controller identifies the first logical storage region for the first nonvolatile semiconductor storage unit and the second logical storage region that is provided with the write load higher than the write load of the first logical storage region for the second nonvolatile semiconductor storage unit based on the statistics information that is related to the write for the first and second logical storage regions, the first logical storage region is a logical storage region based on the first nonvolatile semiconductor memory chip and the second logical storage region is a logical storage region based on the second nonvolatile semiconductor memory chip.

15. The storage apparatus according to claim 14, wherein:

a logical storage region group includes a plurality of stripe lines, and

in the case in which at least two data that are stored into the same stripe line are stored into the same nonvolatile semiconductor memory chip, the storage controller is configured not to exchange data between the first logical storage region and the second logical storage region for an identical logical storage region group based on a write load of the at least two logical storage regions and a remaining length of life of the at least two nonvolatile semiconductor memory chips based on the one logical storage region to which data has been written.

16. The storage apparatus according to claim 4, wherein:

the logical storage region of a write destination of the data that has been read from the first logical storage region and the second logical storage region is decided based on a read load of the logical storage region in addition to the write load for the logical storage region, and

a read load that conforms to an amount of data that is read in a unit time.

17. The storage apparatus according to claim 5, wherein:

the storage controller is configured to store information that indicates a period of guarantee of the nonvolatile semiconductor memory chips, and

the first nonvolatile semiconductor storage unit and the second nonvolatile semiconductor storage unit have characteristics of a remaining length of life and a period of guarantee, which are decided based on a result of a comparison of a remaining length of life of each nonvolatile semiconductor storage unit and a period of guarantee of each nonvolatile semiconductor storage unit.

18. The storage apparatus according to claim 5, wherein:

the numerical value is related to at least one of a remaining frequency of erasing and a real write amount, and

the real write amount of a nonvolatile semiconductor storage unit is a total amount of data that has been written in the nonvolatile semiconductor storage unit as a practical matter.

19. The storage apparatus according to claim 5, wherein:

a unit of the predicted remaining length of life is a day.

20. The storage apparatus according to claim 5, wherein:

the storage controller is configured to identify a nonvolatile semiconductor storage unit in which a remaining length of life is equal to or less than a threshold value based on the remaining life length information that has been acquired,

the storage controller is configured to identify the first logical storage region for the identified nonvolatile semiconductor storage unit and the second logical storage region that is provided with the write load higher than the write load of the first logical storage region based on the statistics information that is related to the write for the first and second logical storage regions, and

the storage controller is configured to read data from the first logical storage region and the second logical storage region, write data that has been read from the first logical storage region to the second logical storage region, or write data that has been read from the second logical storage region to the first logical storage region.

2. A storage apparatus, comprising:

a plurality of nonvolatile semiconductor storage units, each including a memory controller and a plurality of nonvolatile semiconductor memory chips, each of the nonvolatile semiconductor memory chips including a plurality of blocks as a unit of data erasing, the memory controller being configured to manage life length information based on at least erasing frequency of the plurality of blocks and provide logical storage regions corresponding to the nonvolatile semiconductor memory chips; and

a storage controller coupled to the plurality of nonvolatile semiconductor storage units, wherein;

the storage controller is configured to write data to a nonvolatile semiconductor storage unit that is a basis of a logical storage region of a write destination of a plurality of logical storage regions,

the storage controller is configured to send a request to each of the nonvolatile semiconductor storage units for acquiring the life length information,

the memory controller of each of the nonvolatile semiconductor storage units is configured to send the life length information to the storage controller in response to the request,

the storage controller is configured to identify, based on the life length information, a first nonvolatile semiconductor storage unit, and a second nonvolatile semiconductor storage unit that has a remaining length of life longer than a remaining length of life of the first nonvolatile semiconductor storage unit,

the storage controller is configured to transfer data from a first logical storage region of the first nonvolatile semiconductor storage unit to a second logical storage region of the second nonvolatile semiconductor storage unit,

the storage controller is configured to determine whether the remaining life length of a particular nonvolatile semiconductor storage unit is shorter than a remaining guarantee period, and move, when it is determined that the remaining life length of the particular nonvolatile semiconductor storage unit is shorter than the remaining guarantee period, data to a hard disk drive (HDD) that is free of an upper limit of rewriting,

wherein the plurality of nonvolatile semiconductor storage units configure a plurality of nonvolatile semiconductor storage RAID groups,

the plurality of HDDs configure a HDD RAID group,

the storage controller is configured to move data between the nonvolatile semiconductor storage RAID groups and the HDD RAID group in a unit of an extent,

the storage controller is configured to determine whether the remaining life length of a first nonvolatile semiconductor storage RAID group is shorter than a remaining guarantee period of the first nonvolatile semiconductor storage RAID group, and move, when it is determined that the remaining life length of the first nonvolatile semiconductor storage RAID group is shorter than the remaining guarantee period of the first nonvolatile semiconductor storage RAID group, data to a second nonvolatile semiconductor storage RAID group having a remaining life length that is longer than a remaining guarantee period of the second nonvolatile semiconductor storage RAID group, and

the storage controller is configured to determine whether the remaining life length of all of the nonvolatile semiconductor storage RAID groups is shorter than a remaining guarantee period of all of the nonvolatile semiconductor storage RAID groups, and move, when it is determined that the remaining life length of all of the nonvolatile semiconductor storage RAID groups is shorter than the remaining guarantee period of all of the nonvolatile semiconductor storage RAID groups, data to the HDD RAID group.