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Compliant bipolar micro device transfer head with silicon electrodes

  • US 9,406,541 B2
  • Filed: 12/02/2015
  • Issued: 08/02/2016
  • Est. Priority Date: 07/06/2012
  • Status: Active Grant
First Claim
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1. An electrostatic transfer head array comprising:

  • a base substrate;

    an insulating layer on the base substrate;

    a device layer on the insulating layer, the device layer comprising;

    a first trace interconnect integrally formed with a first array of electrodes; and

    a second trace interconnect integrally formed with a second array of electrodes;

    wherein the first array of electrodes is electrically insulated from the second array of electrodes;

    an array of dielectric joints between the first array of electrodes and the second array of electrodes;

    wherein the first trace interconnect and the second trace interconnect are parallel to one another, and the dielectric joints are perpendicular to the first trace interconnect and the second trace interconnect.

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