System comprising a semiconductor device and structure
First Claim
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1. A semiconductor device, comprising:
- a first layer comprising first transistors, said first transistors are interconnected by at least one metal layer comprising copper or aluminum;
a second layer comprising second transistors, said first layer is overlaid by said second layer,wherein said second layer comprises a plurality of through layer vias having a diameter of less than 200 nm,wherein said second transistors comprise a source contact, said source contact comprising a silicide, andwherein said silicide has a sheet resistance of less than 15 ohm/sq.
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Abstract
A semiconductor device, including: a first layer including first transistors, the first transistors are interconnected by at least one metal layer including copper or aluminum; a second layer including second transistors, the first layer is overlaid by the second layer, where the second layer includes a plurality of through layer vias having a diameter of less than 200 nm, where the second transistors include a source contact, the source contact including a silicide, and where the silicide has a sheet resistance of less than 15 ohm/sq.
661 Citations
23 Claims
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1. A semiconductor device, comprising:
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a first layer comprising first transistors, said first transistors are interconnected by at least one metal layer comprising copper or aluminum; a second layer comprising second transistors, said first layer is overlaid by said second layer, wherein said second layer comprises a plurality of through layer vias having a diameter of less than 200 nm, wherein said second transistors comprise a source contact, said source contact comprising a silicide, and wherein said silicide has a sheet resistance of less than 15 ohm/sq. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a first layer comprising first transistors, said first transistors are interconnected by at least one metal layer comprising copper or aluminum; a second layer comprising second transistors, said first layer is overlaid by said second layer, wherein said second layer comprises a plurality of through layer vias having a diameter of less than 200 nm, and wherein at least two of said second transistors comprise connected gates. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a first layer comprising first transistors, said first transistors are interconnected by at least one metal layer comprising copper or aluminum; a second layer comprising second transistors, said first layer is overlaid by said second layer, wherein said second layer comprises a plurality of through layer vias having a diameter of less than 200 nm, and wherein at least two of said second transistors comprise a common source or a common drain. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification