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Method to induce strain in finFET channels from an adjacent region

  • US 9,406,783 B2
  • Filed: 06/30/2015
  • Issued: 08/02/2016
  • Est. Priority Date: 09/16/2013
  • Status: Active Grant
First Claim
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1. A method for making a strained three-dimensional feature on a substrate, the method comprising:

  • forming a first semiconductor layer in a strained state at a surface of a substrate;

    cutting the first semiconductor layer to relieve strain in the first semiconductor layer and form a strain-relieved structure;

    depositing, after the cutting, a material adjacent the strain-relieved structure to restrict expansion and contraction of the strain-relieved structure;

    growing a second semiconductor layer in a strained state adjacent to a surface of the strain-relieved structure; and

    forming the strained three-dimensional feature in the second semiconductor layer.

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