Method for manufacturing at least one optoelectronic semiconductor device

• US 9,406,853 B2
• Filed: 12/21/2011
• Issued: 08/02/2016
• Est. Priority Date: 02/14/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Gebuhr, Tobias, Gallmeier, Hans-Christoph, Brunner, Herbert, Petersen, Kirstin
• Primary Examiner(s): Bachner, Robert
• Assistant Examiner(s): Reida, Molly
• Application Number:
  US13/982,225
• Publication Number:
  US 20140034983A1
• Time in Patent Office: 1,686 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

Claims

1. A method for manufacturing an optoelectronic semiconductor device, the method comprising:

providing a carrier, which has a top side, an underside situated opposite the top side of the carrier and a plurality of electrically conductive connection areas arranged at the top side alongside one another in a lateral direction;

next applying a plurality of optoelectronic semiconductor chips at the top side of the carrier, the chips being arranged in a manner spaced apart from one another in the lateral direction and each having a contact area facing away from the carrier;

next applying a reflective coating to exposed locations of the carrier and side areas of the optoelectronic semiconductor chips;

next introducing openings into the reflective coating, the opening completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in the direction of the top side of the carrier; and

next arranging electrically conductive material on the reflective coating and at least in places in the openings;

wherein the electrically conductive material in each case electrically conductively connects the contact area to the connection area assigned thereto;

wherein radiation passage areas of the optoelectronic semiconductor chips are free of the reflective coating;

wherein the reflective coating does not project vertically beyond the optoelectronic semiconductor chips;

wherein in the openings the electrically conductive material is in direct contact with the connection areas;

wherein in each case the electrically conductive material covers at least a part of the contact area and is in direct contact with the contact area; and

wherein the electrically conductive material in each case is a contiguous layer formed from one single piece.

2. The method according to claim 1, wherein the reflective coating comprises a potting applied by a potting process.

3. The method according to claim 1, wherein the electrically conductive material only partly fills at least one of the openings, and wherein an electrically insulating filling material is arranged in the opening onto exposed locations of the electrically conductive material.

4. The method according to claim 3, wherein the electrically insulating filling material does not project vertically beyond the optoelectronic semiconductor chips and/or the reflective coating.

5. The method according to claim 3, wherein the electrically insulating filling material is formed with a silicone, an epoxide and/or a mixture composed of a silicone and an epoxide.

6. The method according to claim 3,

wherein after arranging the electrically conductive material at least in places onto at least one radiation passage area and at least in places onto exposed locations of the electrically conductive material, at least one conversion layer is applied,

wherein the conversion layer contains at least one luminescence conversion material, and

wherein side areas of the conversion layer are free of the reflective coating.

7. The method according to claim 6, wherein a basic material of the conversion layer, into which basic material the luminescence conversion material is introduced, and the electrically insulating filling material are formed with the same material.

8. The method according to claim 6, wherein the conversion layer is applied by spray coating, electrophoresis, sedimentation or potting.

9. The method according to claim 1,

wherein after arranging the electrically conductive material at least in places onto at least one radiation passage area and at least in places onto exposed locations of the electrically conductive material, at least one conversion layer is applied,

wherein the conversion layer contains at least one luminescence conversion material, and

wherein side areas of the conversion layer are free of the reflective coating.

10. An optoelectronic semiconductor device, comprising:

a carrier, which has a top side, an underside situated opposite the top side of the carrier, and at least one connection area arranged at the top side;

an optoelectronic semiconductor chip arranged at the top side of the carrier and having a contact area facing away from the carrier;

a reflective coating applied to exposed locations of the carrier and of the optoelectronic semiconductor chip;

an opening arranged above the connection area, the opening completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in a direction of the top side of the carrier;

electrically conductive material arranged on the reflective coating and in the opening;

wherein the electrically conductive material electrically conductively connects the contact area to the connection area;

wherein a radiation passage area of the optoelectronic semiconductor chip is free of the reflective coating;

wherein the reflective coating does not project vertically beyond the optoelectronic semiconductor chip;

wherein the reflective coating is in direct contact with the carrier;

wherein in the opening the electrically conductive material is in direct contact with the connection area;

wherein the electrically conductive material covers at least a part of the contact area and is in direct contact with the contact area; and

wherein the electrically conductive material is a contiguous layer formed from one single piece.

11. The optoelectronic semiconductor device according to claim 10, wherein the electrically conductive material only partly fills the opening, and wherein an electrically insulating filling material is arranged in the opening onto exposed locations of the electrically conductive material.

12. The optoelectronic semiconductor device according to claim 10,

wherein conversion layer is arranged on the radiation passage area and onto exposed locations of the electrically conductive material;

wherein the conversion layer contains at least one luminescence conversion material; and

wherein side areas of the conversion layer are free of the reflective coating.

13. A method for manufacturing an optoelectronic semiconductor device, the method comprising:

providing a carrier, which has a top side, an underside situated opposite the top side of the carrier, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction;

applying a plurality of optoelectronic semiconductor chips at the top side of the carrier, the chips being arranged in a manner spaced apart from one another in the lateral direction and each having a contact area facing away from the carrier;

applying a reflective coating to exposed locations of the carrier and side areas of the optoelectronic semiconductor chips;

introducing openings into the reflective coating, the openings completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in the direction of the top side of the carrier; and

arranging electrically conductive material on the reflective coating and in the openings;

wherein the electrically conductive material in each case electrically conductively connects a contact area to the connection area assigned thereto;

wherein radiation passage areas of the optoelectronic semiconductor chips are free of the reflective coating;

wherein the reflective coating does not project vertically beyond the optoelectronic semiconductor chips;

wherein the openings are of conical design, a diameter of each opening reducing in a direction to the carrier;

wherein in the openings the electrically conductive material is in direct contact with the connection areas;

wherein in each case the electrically conductive material covers at least a part of the contact area and is in direct contact with the contact area;

wherein the electrically conductive material in each case is a contiguous layer formed from one single piece;

wherein after arranging the electrically conductive material at least in places onto at least one radiation passage area and at least in places onto exposed locations of the electrically conductive material, at least one conversion layer is applied;

wherein the conversion layer contains at least one luminescence conversion material;

wherein side areas of the conversion layer are free of the reflective coatings; and

wherein the conversion layer is arranged at least in places in the openings onto exposed locations of the electrically conductive material.