Strain isolation structures for stretchable electronics
First Claim
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1. An apparatus comprising:
- a silicon-based semiconductor device component;
a flexible base, the silicon-based semiconductor device component being disposed on, or at least partially embedded in, the flexible base;
at least one conductive stretchable interconnect in electrical communication with the silicon-based semiconductor device component, the at least one conductive stretchable interconnect forming the electrical communication with the silicon-based semiconductor device component at a junction region;
a buffer structure having an annular shape with an inner edge surface defining an inner diameter of the annular shape and an outer edge surface defining an outer diameter of the annular shape, the inner edge surface of the buffer structure being horizontally offset from the junction region in a first direction and the outer edge surface of the buffer structure being horizontally offset from the junction region in a second opposing direction; and
an encapsulant encapsulating at least the silicon-based semiconductor device component and the junction region, wherein;
the buffer structure overlaps with at least a portion of the flexible base;
the flexible base has a higher value of Young'"'"'s modulus than the encapsulant; and
the buffer structure has a higher value of Young'"'"'s modulus than the encapsulant.
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Abstract
Buffer structures are provided that can be used to reduce a strain in a conformable electronic system that includes compliant components in electrical communication with more rigid device components. The buffer structures are disposed on, or at least partially embedded in, the conformable electronic system such that the buffer structures overlap with at least a portion of a junction region between a compliant component and a more rigid device component. The buffer structure can have a higher value of Young'"'"'s modulus than an encapsulant of the conformable electronic system.
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Citations
20 Claims
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1. An apparatus comprising:
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a silicon-based semiconductor device component; a flexible base, the silicon-based semiconductor device component being disposed on, or at least partially embedded in, the flexible base; at least one conductive stretchable interconnect in electrical communication with the silicon-based semiconductor device component, the at least one conductive stretchable interconnect forming the electrical communication with the silicon-based semiconductor device component at a junction region; a buffer structure having an annular shape with an inner edge surface defining an inner diameter of the annular shape and an outer edge surface defining an outer diameter of the annular shape, the inner edge surface of the buffer structure being horizontally offset from the junction region in a first direction and the outer edge surface of the buffer structure being horizontally offset from the junction region in a second opposing direction; and an encapsulant encapsulating at least the silicon-based semiconductor device component and the junction region, wherein; the buffer structure overlaps with at least a portion of the flexible base; the flexible base has a higher value of Young'"'"'s modulus than the encapsulant; and the buffer structure has a higher value of Young'"'"'s modulus than the encapsulant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification