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Strain isolation structures for stretchable electronics

  • US 9,408,305 B2
  • Filed: 11/20/2015
  • Issued: 08/02/2016
  • Est. Priority Date: 06/11/2012
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a silicon-based semiconductor device component;

    a flexible base, the silicon-based semiconductor device component being disposed on, or at least partially embedded in, the flexible base;

    at least one conductive stretchable interconnect in electrical communication with the silicon-based semiconductor device component, the at least one conductive stretchable interconnect forming the electrical communication with the silicon-based semiconductor device component at a junction region;

    a buffer structure having an annular shape with an inner edge surface defining an inner diameter of the annular shape and an outer edge surface defining an outer diameter of the annular shape, the inner edge surface of the buffer structure being horizontally offset from the junction region in a first direction and the outer edge surface of the buffer structure being horizontally offset from the junction region in a second opposing direction; and

    an encapsulant encapsulating at least the silicon-based semiconductor device component and the junction region, wherein;

    the buffer structure overlaps with at least a portion of the flexible base;

    the flexible base has a higher value of Young'"'"'s modulus than the encapsulant; and

    the buffer structure has a higher value of Young'"'"'s modulus than the encapsulant.

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