Sputtering target and method for manufacturing semiconductor device
First Claim
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1. A sputtering target for forming an oxide semiconductor film, comprising:
- a sintered body of at least one oxide selected from zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein heat treatment is performed on the sputtering target at a temperature higher than or equal to 425°
C. and lower than or equal to 750°
C. in an inert gas atmosphere, andwherein concentration of each of alkali metals contained in the sintered body by SIMS is 5×
1016 cm−
3 or lower.
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Abstract
An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.
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Citations
14 Claims
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1. A sputtering target for forming an oxide semiconductor film, comprising:
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a sintered body of at least one oxide selected from zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide, wherein heat treatment is performed on the sputtering target at a temperature higher than or equal to 425°
C. and lower than or equal to 750°
C. in an inert gas atmosphere, andwherein concentration of each of alkali metals contained in the sintered body by SIMS is 5×
1016 cm−
3 or lower. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A sputtering target for forming an oxide semiconductor film, comprising:
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a sintered body of at least one oxide selected from zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide, wherein concentration of each of alkali metals contained in the sintered body by SIMS is 5×
1016 cm−
3 or lower,wherein a filling rate of the sputtering target is higher than or equal to 95% and lower than or equal to 99.9%, and wherein concentration of hydrogen contained in the sintered body by SIMS is 1×
10−
9 cm−
3 or lower. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Abdelaziez, Yasser A
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Application NumberUS14/658,876Publication NumberTime in Patent Office512 DaysField of SearchUS Class Current1/1CPC Class CodesC23C 14/081 of aluminium, magnesium or ...C23C 14/086 of zinc, germanium, cadmium...C23C 14/3414 Metallurgical or chemical a...H01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...
