Display device
First Claim
1. A semiconductor device comprising:
- an intrinsic or substantially intrinsic oxide semiconductor film that includes a channel formation region of a transistor and comprises indium, zinc and a metal other than indium and zinc;
a source electrode and a drain electrode electrically connected with the oxide semiconductor film; and
a gate electrode overlapping with the channel formation region with an insulating film therebetween,wherein carrier density of the oxide semiconductor film is less than 1×
1012 cm−
3,wherein an off-state current of the transistor is 1×
10−
18 A/μ
m or less, andwherein a relation of Ec−
Ef<
Eg/2 is satisfied where Eg is a band gap of the oxide semiconductor film, Ec is an energy at a bottom of a conduction band of the oxide semiconductor film, and Ef is a Fermi energy of the oxide semiconductor film.
1 Assignment
0 Petitions
Accused Products
Abstract
One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×1016 cm−3.
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Citations
20 Claims
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1. A semiconductor device comprising:
-
an intrinsic or substantially intrinsic oxide semiconductor film that includes a channel formation region of a transistor and comprises indium, zinc and a metal other than indium and zinc; a source electrode and a drain electrode electrically connected with the oxide semiconductor film; and a gate electrode overlapping with the channel formation region with an insulating film therebetween, wherein carrier density of the oxide semiconductor film is less than 1×
1012 cm−
3,wherein an off-state current of the transistor is 1×
10−
18 A/μ
m or less, andwherein a relation of Ec−
Ef<
Eg/2 is satisfied where Eg is a band gap of the oxide semiconductor film, Ec is an energy at a bottom of a conduction band of the oxide semiconductor film, and Ef is a Fermi energy of the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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an intrinsic or substantially intrinsic oxide semiconductor film that includes a channel formation region of a transistor and comprises indium, zinc and a metal other than indium and zinc; a source electrode and a drain electrode electrically connected with the oxide semiconductor film; and a gate electrode overlapping with the channel formation region with an insulating film therebetween, wherein the channel formation region comprises a crystalline region in which c-axis is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film, wherein carrier density of the oxide semiconductor film is less than 1×
1012 cm−
3, andwherein a relation of Ec−
Ef<
Eg/2 is satisfied where Eg is a band gap of the oxide semiconductor film, Ec is an energy at a bottom of a conduction band of the oxide semiconductor film, and Ef is a Fermi energy of the oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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an intrinsic or substantially intrinsic oxide semiconductor film that includes a channel formation region of a transistor and comprises indium, zinc and a metal other than indium and zinc; a source electrode and a drain electrode electrically connected with the oxide semiconductor film; and a gate electrode overlapping with the channel formation region with an insulating film therebetween, wherein the channel formation region comprises microcrystals, wherein carrier density of the oxide semiconductor film is less than 1×
1012 cm−
3, andwherein a relation of Ec−
Ef<
Eg/2 is satisfied where Eg is a band gap of the oxide semiconductor film, Ec is an energy at a bottom of a conduction band of the oxide semiconductor film, and Ef is a Fermi energy of the oxide semiconductor film. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification