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C-element with non-volatile back-up

  • US 9,412,448 B2
  • Filed: 09/03/2015
  • Issued: 08/09/2016
  • Est. Priority Date: 09/04/2014
  • Status: Active Grant
First Claim
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1. A circuit comprising:

  • a C-element having first and second input nodes and first and second inverters cross-coupled between first and second complementary storage nodes, the second storage node forming an output node of the C-element; and

    a non-volatile memory comprising;

    a first resistive element having a first terminal coupled to the first storage node;

    a second resistive element having a first terminal coupled to the second storage node, at least one of the first and second resistive elements being programmable to have one of at least two resistive states, a data value being represented by the relative resistances of the first and second resistive elements, wherein a second terminal of the first resistive element is coupled to a second terminal of the second resistive element via a write transistor; and

    a control block configured, during a backup phase of a data bit stored at the first and second storage nodes to the non-volatile memory, to render conductive the write transistor while different logic levels are applied to the first and second input nodes of the C-element.

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