Semiconductor reaction chamber with plasma capabilities

• US 9,412,564 B2
• Filed: 03/16/2015
• Issued: 08/09/2016
• Est. Priority Date: 07/22/2013
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Milligan, Robert Brennan, Alokozai, Fred
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US14/659,437
• Publication Number:
  US 20160013024A1
• Time in Patent Office: 512 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32651 Shields, e.g. dark space shields, Faraday shields
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

Claims

1. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a faraday shield;

a first excited species generation zone in communication with the processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein both of the first excited species generation zone and the second excited species generation zone are contained within the faraday shield, and

wherein a valve is positioned between one or more of the first excited species generation zone and the processing gas inlet and the second excited species generation zone and the processing gas inlet.

2. The processing chamber of claim 1, wherein a reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone.

3. The processing chamber of claim 1, wherein the first and second excited species generation zones are co-axially aligned.

4. The processing chamber of claim 1 wherein the first excited species generation zone comprises an inductively coupled plasma generator.

5. The processing chamber of claim 1, wherein the second excited species generation zone comprises an inductively coupled plasma generator.

6. The processing chamber of claim 1, wherein the first excited species generation zone comprises a capacitively coupled plasma generator.

7. The processing chamber of claim 1, wherein the second excited species generation zone comprises a capacitively coupled plasma generator.

8. The processing chamber of claim 1, further comprising an inert gas flow positioned between the first and second excited species generation zones.

9. The processing chamber of claim 1, wherein the first and second excited species generation zones are separated by inert gas valves.

10. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a first excited species generation zone in communication with the processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein the reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone.

11. The processing chamber of claim 10, wherein the first excited species generation zone and the second excited species generation zone are within a faraday shield.

12. The processing chamber of claim 10, wherein the first and second excited species generation zones are co-axially aligned.

13. The processing chamber of claim 10, wherein the first and second excited species generation zones are non-co-axial.

14. The processing chamber of claim 10, wherein the first excited species generation zone comprises an inductively coupled plasma generator.

15. The processing chamber of claim 10, wherein the first excited species generation zone comprises a capacitively coupled plasma generator.

16. An apparatus for processing a substrate, the apparatus comprising:

a first excited species generation zone in communication with a processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein first excited species from the first excited species generation zone and second excited species from the second excited species generation zone are selectively introduced to an inlet of a reaction zone.

17. The apparatus of claim 16 wherein the first and second excited species generation zones are non-co-axial.

18. The processing chamber of claim 16 wherein the first and second excited species generation zones are co-axially aligned.

19. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a faraday shield;

a first excited species generation zone in communication with the processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, and

wherein a reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone.

20. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a faraday shield;

a first excited species generation zone in communication with the processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, and

wherein the first and second excited species generation zones are co-axially aligned.

21. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a faraday shield;

a first excited species generation zone in communication with the processing gas inlet;

a second excited species generation zone in communication with the processing gas inlet; and

an inert gas flow positioned between the first and second excited species generation zones,

wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield.

22. A processing chamber comprising:

a reaction chamber having a processing area;

a processing gas inlet in communication with the processing area;

a faraday shield;

a first excited species generation zone in communication with the processing gas inlet; and

a second excited species generation zone in communication with the processing gas inlet,

wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, and

wherein the first and second excited species generation zones are separated by inert gas valves.