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Semiconductor reaction chamber with plasma capabilities

  • US 9,412,564 B2
  • Filed: 03/16/2015
  • Issued: 08/09/2016
  • Est. Priority Date: 07/22/2013
  • Status: Active Grant
First Claim
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1. A processing chamber comprising:

  • a reaction chamber having a processing area;

    a processing gas inlet in communication with the processing area;

    a faraday shield;

    a first excited species generation zone in communication with the processing gas inlet; and

    a second excited species generation zone in communication with the processing gas inlet,wherein both of the first excited species generation zone and the second excited species generation zone are contained within the faraday shield, andwherein a valve is positioned between one or more of the first excited species generation zone and the processing gas inlet and the second excited species generation zone and the processing gas inlet.

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