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Manufacturing method of oxide semiconductor device

  • US 9,412,590 B1
  • Filed: 08/31/2015
  • Issued: 08/09/2016
  • Est. Priority Date: 08/31/2015
  • Status: Active Grant
First Claim
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1. A manufacturing method of an oxide semiconductor device, comprising:

  • forming a barrier layer on a substrate;

    performing an annealing process after the step of forming the barrier layer;

    performing a first oxygen treatment on the barrier layer after the annealing processfor forming a first oxygen provider layer on the barrier layer, wherein the first oxygen treatment comprises an ozone cleaning treatment; and

    forming an oxide semiconductor layer on the first oxygen provider layer.

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